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Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.


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Patent
Robert A. Ashton1
22 Jan 1999
TL;DR: In this paper, the van der Pauw semiconductor test structure for and a method of testing a resistivity of a doped area formed within a substrate of a semiconductor wafer which may be under a diffusion area or a gate structure.
Abstract: The present invention provides a van der Pauw semiconductor test structure for and a method of testing a resistivity of a doped area formed within a substrate of a semiconductor wafer which may be under a diffusion area or a gate structure. The test structure can include field oxide regions formed on a surface of the substrate and a base doped substrate formed within the substrate. Further, the test structure includes a first primary tub and secondary tubs that are formed within the base doped substrate, each of the secondary tubs having a first diffusion region formed adjacent to an inner isolation structure and a second diffusion region formed adjacent to an outer isolation structure. A second primary tub is located adjacent the first primary tub and a dielectric layer is formed over the substrate having contacts formed within the dielectric layer and between the isolation structures. Further still, the test structure may include a gate structure as part of the semiconductor test structure, with the gate structure having openings formed therein through which the contacts extend to the first diffusion regions and the second diffusion regions.

18 citations

Journal ArticleDOI
TL;DR: In this paper, an aligned carbon nanotube (CNT)-based strain sensor was presented, which was applied on polymeric substrates, such as ADEXepoxy, polyethylene terephthalate (PET), and polyimide (PI).
Abstract: This paper presents an aligned carbon nanotube (CNT)-based strain sensor. Vertical aligned carbon nanotubes (VA-CNT), synthesized by chemical vapour deposition (CVD), were knocked down onto polymeric films, in order to obtain a thin 10 × 10 × 0.05 mm CNT patch. Different polymeric substrates, ADEXepoxy, polyethylene terephthalate (PET) and polyimide (PI) were used. The samples’ morphology before and after the knock down process, specifically their alignment, was observed by scanning electron microscopy (SEM). The good quality of the synthesized VA-CNT was assessed by Raman spectroscopy. Furthermore, transmission electron microscopy (TEM) analysis was carried out to determine the average wall number and diameters (inner and outer) of the VA-CNT. A MATLAB software with an adapted Van der Pauw method for anisotropic conductors was developed to determine the electric properties of the obtained samples, which were strained in the transverse (X) and parallel (Y) directions with respect to the CNT alignment. The electric anisotropy, defined as electric resistance ratio between obtained measurements along the X (Rxx) and Y (Ryy) -axes, decreases with deformation increment when the sample was strained in the Y-direction, while it increases when strained in the X-direction. Moreover, the obtained Gauge factor values showed a much sensitive response to deformation, i.e., approximately 47% increase in GF values, when the samples are strained transversely to CNT alignment. These results showed that the piezoresistive CNT/polymeric based sensor produced is suitable for strain sensing applications.

18 citations

Journal ArticleDOI
TL;DR: In this paper, the van der Pauw method was used to investigate the electrical contrast between the amorphous and metastable crystalline state of GeTe and SnSb2Se4, up to a 4.5:1 GeTe:SnSb 2Se4 ratio.
Abstract: Thin film samples of Ge9SnSb2Te9Se4, Ge4.5SnSb2Te4.5Se4, Ge2.5SnSb2Te2.5Se4, and GeSnSb2TeSe4 were prepared via co-sputtering of GeTe and SnSb2Se4 and compared to the well-investigated phase change material GeTe. All samples were obtained in an amorphous state. Temperature-dependent in situ X-ray diffraction experiments reveal a crystallization temperature that increases with an increasing SnSb2Se4 content, leading to a higher stability of the amorphous phase. The electrical contrast between the amorphous and metastable crystalline state investigated via the van der Pauw method is as large as 4 orders of magnitude up to a 4.5:1 GeTe:SnSb2Se4 ratio. Increasing the SnSb2Se4 content leads to a decrease in the electrical contrast. Investigations of the samples by applying Fourier transform infrared spectroscopy and variable incident angle spectroscopic ellipsometry show that the optical properties of the amorphous phase are not affected by changes in stoichiometry. In striking contrast, the impact of SnSb2Se4...

18 citations

Journal ArticleDOI
TL;DR: Hall measurements have been made on epitaxially grown, zinc-doped gallium phosphide, from which the gallium arsenide substrate had been removed The measurements were made in the temperature range from 300° to 4°K on samples whose room-temperature carrier concentration varied from 7×1015 to 7× 1018 cm−3 Using both van der Pauw and conventional Hall techniques on those samples which show a high degree of compensation, the variation of the ionization energy of zinc with concentration was determined Room-tem temperature hole mobility varied from 60 to 100 cm2·
Abstract: Hall measurements have been made on epitaxially grown, zinc‐doped gallium phosphide, from which the gallium arsenide substrate had been removed The measurements were made in the temperature range from 300° to 4°K on samples whose room‐temperature carrier concentration varied from 7×1015 to 7×1018 cm−3 Using both van der Pauw and conventional Hall techniques on those samples which show a high degree of compensation, the variation of the ionization energy of zinc with concentration was determined Room‐temperature hole mobility varied from 60 to 100 cm2· V−1· sec−1 These observed hole mobilities are in good agreement with the calculated values of mobility due to reduced scattering by acoustical and optical phonons, and are shown to be too small to be accounted for by the mechanism of impurity scattering below 100°K Resistivity measurements made in the temperature range 77°–42°K show that in the impurity band conduction range, gallium phosphide behaves in a manner similar to impure germanium

18 citations

Journal ArticleDOI
TL;DR: In this article, the authors presented results on sub-melt Excimer laser annealing in order to obtain difussionless activation of Boron for the creation of ultra shallow P-MOS devices.
Abstract: In this work we present results on sub-melt Excimer laser annealing in order to obtain difussionless activation of Boron for the creation of ultra shallow P-MOS devices. For the fulfillment of the strict requirements imposed by the ITRS roadmap for the 32 nm node we have implemented two emerging techniques: non-melt laser annealing and BF 3 Plasma Doping implantation (PLAD). By using PLAD, we were able to create ultra shallow and abrupt as implanted profiles. On the other hand, by performing laser annealing on the samples in the sub-melt regime, we can achieve high levels of electrical activation, while practically eliminating Boron diffusion, due to its capability to deliver low thermal budget in the sub-microsecond time scale. An Excimer KrF laser ( λ = 248 nm and pulse duration 38 ns) has been used. The post annealing characterization of the samples included SIMS and Van Der Pauw Sheet resistance measurements. SIMS data indicate almost difussionless dopant behavior with R s values at 680 Ω/sq. We have concluded our analysis with the examination of the morphological characteristics both of the surface of the sample using Atomic Force Microscopy (AFM) and the evolution of the recrystallization of the amorphized layers and the removal of the defects by means of cross-section Transmission Electron Microscopy.

17 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202328
202241
202128
202030
201960
201867