Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: The electrical properties of Si-doped AlGaN layers (AlN molar fractions: 0.03-0.06) with the donor concentrations (N D) from 8.8 × 1017 to 4.5 × 1020 cm−3 were investigated by variable-temperature Hall effect measurement using the van der Pauw method as mentioned in this paper.
Abstract: The electrical properties of Si-doped AlGaN layers (AlN molar fractions: 0.03–0.06) with the donor concentrations (N D) from 8.8 × 1017 to 4.5 × 1020 cm−3 were investigated by variable-temperature Hall effect measurement using the van der Pauw method. A minimum resistivity of 3.6 × 10−4 Ω cm was obtained for Si-doped AlGaN with a smooth surface at room temperature. We found that the activation energy of the Si donor is affected by the Coulomb interaction in the AlGaN layer with N D values from 8.8 × 1017 to 2.5 × 1020 cm−3. In several AlGaN layers, the free-electron concentration did not vary with sample temperature, as expected in the case of degeneracy. The localization of GaN in the AlGaN layer was speculated as a cause of degeneracy of samples.
15 citations
TL;DR: In this paper, semi-insulting CdTe bulk crystals were grown from the vapour phase in both closed and semi-open arrangements and the results of the growth experiments were discussed in terms of various electrical and optical characterization methods.
15 citations
TL;DR: In this paper, resistivity measurements have been carried out on thin films of evaporated α-Mn between 300 and 1.5 K using the Van der Pauw technique, revealing a wide variety of low temperature behaviours ranging from that typical of bulk α-mn to that regarded as typical of a metallic alloy glass with a negative temperature coefficient of resistivity at room temperature.
15 citations
TL;DR: In this article, Hall measurements in van der Pauw geometry and subsequent simulation of the carrier densities depending on temperature were obtained for CuInSe2 and InSe2 crystals.
15 citations
TL;DR: In this article, the effects of post-deposition annealing treatment on structural, electrical and optical properties of the ZnO : (Dy) thin films were investigated.
Abstract: Transparent conductive Dy-doped zinc oxide thin films have been deposited on glass substrates by pulsed laser deposition technique. The effects of post-deposition annealing treatment on structural, electrical and optical properties of the ZnO : (Dy) thin films were investigated. The films show high transparency and conductivity. Van der Pauw measurements reveal that the films are n-type degenerate semiconductors. The electrical resistivity of the films deposited at 300 °C is 2.74 × 10−4 Ω cm with a carrier density of 9.33 × 1020 cm−3 and a Hall mobility of 24.48 cm2 V−1 s−1. The resistivity can be further reduced to as low as 2.12 × 10−4 Ω cm by post-deposition annealing at 420 °C for 2 h in nitrogen. Post-annealing increased the grain size and surface roughness of the films. The average transmission of the ZnO : (Dy) films (with a thickness about 529 nm) in the visible range is above 80%. The optical direct band gap value of the films is about 3.7 eV, which is slightly dependent on the annealing treatment in nitrogen.
15 citations