Showing papers on "Variable-range hopping published in 2012"

The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

Abstract: We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hopping (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.

Electrical Transport in Colloidal Quantum Dot Films.

Abstract: In nanocrystal solids, the small density of states of quantum dots makes it difficult to achieve metallic conductivity without band-like transport. However, to achieve band-like transport, the energy scale of the disorder should be smaller than the coupling energy. This is unlikely with the present systems due to the size polydispersivity. Transport by hopping may nevertheless lead to an increased mobility with decreasing temperature for some temperature range, and such behavior at finite temperature is not proof of band-like conduction. To date, at low temperature, variable range hopping in semiconductor or weakly coupled metal nanocrystal solids dominates transport, as in disordered semiconductors.

Efros-Shklovskii Variable Range Hopping in Reduced Graphene Oxide Sheets

Abstract: We investigate the low temperature electron transport properties of chemically reduced graphene oxide (RGO) sheets with different carbon sp2 fractions of 55 to 80 %. We show that in the low bias (Ohmic) regime, the temperature (T) dependent resistance (R) of all the devices follow Efros-Shklovskii variable range hopping (ES-VRH) R ~ exp[(T(ES)/T)^1/2] with T(ES) decreasing from 30976 to 4225 K and electron localization length increasing from 0.46 to 3.21 nm with increasing sp2 fraction. From our data, we predict that for the temperature range used in our study, Mott-VRH may not be observed even at 100 % sp2 fraction samples due to residual topological defects and structural disorders. From the localization length, we calculate a bandgap variation of our RGO from 1.43 to 0.21 eV with increasing sp2 fraction from 55 to 80 % which agrees remarkably well with theoretical prediction. We also show that, in the high bias regime, the hopping is field driven and the data follow R ~ exp[(E(0)/E)^1/2] providing further evidence of ES-VRH.

Why Is the Bulk Resistivity of Topological Insulators So Small

Abstract: As-grown topological insulators (TIs) are typically heavily doped $n$-type crystals. Compensation by acceptors is used to move the Fermi level to the middle of the band gap, but even then TIs have a frustratingly small bulk resistivity. We show that this small resistivity is the result of band bending by poorly screened fluctuations in the random Coulomb potential. Using numerical simulations of a completely compensated TI, we find that the bulk resistivity has an activation energy of just 0.15 times the band gap, in good agreement with experimental data. At lower temperatures activated transport crosses over to variable range hopping with a relatively large localization length.

Ferroelectric-thermoelectricity and Mott transition of ferroelectric oxides with high electronic conductivity

Abstract: This paper reviews ferroelectric oxides in the unusual condition where the concentration of electronic carriers is close to a metal–insulator transition; in certain structures and compositions these materials have properties of interest for oxide based thermoelectric applications. In relaxor ferroelectrics, nanopolar regions associated with intrinsic localized phonon modes provide glass-like phonon characteristics due to the large levels of phonon scattering. The (Sr1−xBax)Nb2O6−δ relaxor ferroelectric single crystals have a high thermoelectric power factor, S2σ ∼ 40 μW/cm K2 at 277 °C along the c-axis, which is competitive with the best thermoelectrics. In the heavily reduced, nonstoichiometric n-type perovskite BaTiO3−δ and tungsten bronze (Sr1−xBax)Nb2O6−δ, it is shown that metallic-like conductivity occurs in the paraelectric phase and the onset of ferroelectricity stabilizes semiconducting character. Both the phase transition temperature dependence on the carrier concentration and evidence for polarization coupling to the conductivity mechanism will be discussed.

The extrinsic origin of the magnetodielectric effect in the double perovskite La2NiMnO6.

Abstract: A La2NiMnO6 polycrystalline sample prepared by the sol–gel method showed monoclinic crystal structure with the P21/n space group and a saturation magnetization of 4.63 μB/f.u. at 5 K. Impedance spectroscopy results in the temperature range of 10 K < T < 300 K have revealed a distinct conduction process at grains and grain boundaries, where the grains followed the variable range hopping mechanism and the grain boundaries obeyed Arrhenius thermal activation. A negative magnetoresistance of 2.5% was observed at the paramagnetic to ferromagnetic transition, and this became temperature independent below the magnetic ordering. A marginal positive magnetodielectric (MD) effect that followed the dielectric relaxation was observed and its magnitude was found to decrease with increase of the frequency. A systematic study on the magnetic field induced dielectric properties, dc transport and dc bias effect on the dielectric permittivity has revealed the extrinsic origin of the MD effect in the bulk sample of La2NiMnO6.

Ultracold lattice gases with periodically modulated interactions.

Abstract: We show that a time-dependent magnetic field inducing a periodically modulated scattering length may lead to interesting novel scenarios for cold gases in optical lattices, characterized by a nonlinear hopping depending on the number difference at neighboring sites. We discuss the rich physics introduced by this hopping, including pair superfluidity, exactly defect-free Mott-insulator states for finite hopping, and pure holon and doublon superfluids. We also address experimental detection, showing that the introduced nonlinear hopping may lead in harmonically trapped gases to abrupt drops in the density profile marking the interface between different superfluid regions.

Charge transport in amorphous InGaZnO thin-film transistors

Abstract: We investigate the mechanism of charge transport in indium gallium zinc oxide (a-IGZO), an amorphous metal-oxide semiconductor. We measured the field-effect mobility and the Seebeck coefficient (S=ΔV/ΔT) of a-IGZO in thin-film transistors as a function of charge-carrier density for different temperatures. Using these transistors, we further employed a scanning Kelvin probe-based technique to determine the density of states of a-IGZO that is used as the basis for the modeling. After comparing two commonly used models, the band transport percolation model and a mobility edge model, we find that both cannot describe the full properties of the charge transport in the a-IGZO semiconductor. We, therefore, propose a model that extends the mobility edge model to allow for variable range hopping below the mobility edge. The extended mobility edge model gives a superior description of the experimental results. We show that the charge transport is dominated by variable range hopping below, rather than by bandlike transport above the mobility edge. © 2012 American Physical Society.

Topological phase transitions driven by next-nearest-neighbor hopping in two-dimensional lattices

Abstract: For two-dimensional lattices in a tight-binding description, the intrinsic spin-orbit coupling, acting as a complex next-nearest-neighbor hopping, opens gaps that exhibit the quantum spin Hall effect. In this paper, we study the effect of a real next-nearest-neighbor hopping term on the band structure of several Dirac systems. In our model, the spin is conserved, which allows us to analyze the spin Chern numbers. We show that in the Lieb, kagome, and ${T}_{3}$ lattices, variation of the amplitude of the real next-nearest-neighbor hopping term drives interesting topological phase transitions. These transitions may be experimentally realized in optical lattices under shaking, when the ratio between the nearest- and next-nearest-neighbor hopping parameters can be tuned to any possible value. Finally, we show that in the honeycomb lattice, next-nearest-neighbor hopping only drives topological phase transitions in the presence of a magnetic field, leading to the conjecture that these transitions can only occur in multigap systems.

Spin-flip induced magnetoresistance in positionally disordered organic solids.

Abstract: A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up ``spin-blocked'' pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.

Charge transport gap in graphene antidot lattices

Abstract: Graphene antidot lattices (GALs) offer an attractive approach to band-gap engineering in graphene Theoretical studies indicate that the size of the opened gap is sensitive to the shape, size, and architecture of the nanoholes introduced into the graphene sheet We have investigated the temperature-dependent electrical conductivity of GALs comprising 50-nm-diameter nanoholes with a pitch of 80, 100, and 200 nm, respectively The data reveal the presence of localized states within a transport gap, whose interactions lead to a soft Coulomb gap and associated Efros-Shklovskii variable range hopping (ES-VRH) This conduction type is preserved upon application of magnetic fields up to 1 Tesla, above which a transition to Mott variable range hopping occurs Such a crossover can alternatively be introduced at zero magnetic fields by increasing either the nanohole spacing or the gate-controlled carrier concentration Furthermore, at intermediate magnetic fields, the hopping exponent assumes a value of 2/3, as predicted by percolation theory for ES-VRH under this condition

Role of Percolation in the Conductance of Electrolyte-Gated SrTiO 3

Abstract: We study the electrolyte-gate-induced conductance at the surface of SrTiO(3)(001). We find two distinct transport regimes as a function of gate voltage. At high carrier densities, a percolative metallic state is induced in which, at low temperatures, clear signatures of a Kondo effect are observed. At lower carrier densities, the resistance diverges at low temperatures and can be well described by a 2D variable range hopping model. We postulate that this derives from nonpercolative transport due to inhomogeneous electric fields from imperfectly ordered ions at the electrolyte-oxide interface.

Mott transition in the two-dimensional Hubbard model.

Abstract: Spectral properties of the two-dimensional Hubbard model near the Mott transition are investigated by using cluster perturbation theory. The Mott transition is characterized by freezing of the charge degrees of freedom in a single-particle excitation that leads continuously to the magnetic excitation of the Mott insulator. Various anomalous spectral features observed in cuprate high-temperature superconductors are explained in a unified manner as properties near the Mott transition.

Effect of multiwalled carbon nanotubes on electrical conductivity and magnetoconductivity of polyaniline

Abstract: An in situ chemical polymerization method was applied in order to prepare polyaniline-multiwalled carbon nanotube (PANI-MWCNT) composites with different concentrations of MWCNT. X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, optical absorption and photoluminescence analyses of the composites were performed to investigate the structural, morphological and optical properties of the composites. Electrical transport properties of different PANI-MWCNT composites were investigated in the temperature range 77?K ? T??? 300?K in the presence and also in the absence of a magnetic field up to 1?T. The dc resistivity of the composites follows Mott's variable range hopping theory. Two different slopes have been observed in temperature variation of resistivity, which occurs due to the presence of MWCNT in the polymer matrix. The magnetoconductivity of the samples at different temperatures is negative, which can be explained by the wavefunction shrinkage effect.

Semiclassical theory of magnetoresistance in positionally-disordered organic semiconductors

Abstract: A recently introduced percolative theory of unipolar organic magnetoresistance is generalized by treating the hyperfine interaction semiclassically for an arbitrary hopping rate. Compact analytic results for the magnetoresistance are achievable when carrier hopping occurs much more frequently than the hyperfine field precession period. In other regimes, the magnetoresistance can be straightforwardly evaluated numerically. Slow and fast hopping magnetoresistance are found to be uniquely characterized by their lineshapes. We find that the threshold hopping distance is analogous a phenomenological two-site model's branching parameter, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance.

Hopping Conduction in Mn Ion-Implanted GaAs Nanowires.

Abstract: We report on temperature-dependent charge transport in heavily doped Mn+-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.

Excellent p-n control in a high temperature thermoelectric boride

Abstract: Polycrystalline samples of YxAlyB14 (x ∼ 0.57) with different fractional occupancies y (0.41 ≤ y ≤ 0.63) were synthesized and their thermoelectric properties investigated. Electrical conductivities generally followed three-dimensional variable range hopping with a rapid delocalization indicated as electrons were increased. Positive Seebeck coefficients were obtained for the Al-poor sample, y = 0.41, which was shifted in the negative direction with increase of y. Maximum Seebeck coefficient values were approximately 400 μV K−1 at 850 K and −200 μV K−1 at 1000 K, for p-type and n-type, respectively. Excellent control of p-n characteristics was achieved in a system with the same crystal structure and consisting of the same elements.

Absence of polar order in LuFe2O4

Abstract: LuFe2O4 often is considered as a prototypical multiferroic with polar order arising from the electronic degrees of freedom only (“electronic ferroelectricity”). In the present work, we check the intrinsic nature of the dielectric response of this material by performing dielectric measurements of polycrystalline samples with different types of contact materials and with different grain sizes. In addition, frequency-dependent measurements of the electric-field dependent polarization are provided. The obtained results unequivocally prove that the reported colossal dielectric constants in LuFe2O4, which were interpreted in terms of electronic ferroelectricity, are of non-intrinsic surface-related origin. The intrinsic dielectric properties of this material show no indications of any ferroelectric order and, thus, LuFe2O4 is not multiferroic. Its intrinsic dielectric constant is close to 20 and its dielectric loss is dominated by charge transport via variable range hopping.

Hopping conduction in bismuth modified zinc vanadate glasses: An applicability of Mott's model

Abstract: The dc conductivity measured in a wide range of temperatures (room temperature to 533.16 K) for glass samples of compositions 50V2O5·xBi2O3·(50-x) ZnO; x = 0, 5, 10, 15, and 20, is discussed in this paper. The temperature dependent dc conductivity has been analyzed in the framework of various theoretical models, which describe the hopping conduction in disordered semiconducting systems. It has been observed that Mott's model of polaron hopping in transition metals is in good agreement with the experimental data in high as well as intermediate temperature regions. The various polaron hopping parameters have also been deduced. It has been ascertained by these estimated quantities and different approaches that the electrical conduction in present glass system is due to non-adiabatic variable range hopping of small polarons. Moreover, it has been found that Mott's and Greaves’ variable range hopping models are in good agreement with the experimental data in the whole studied temperature range in the present i...

One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

Abstract: Ternary Cu–Bi–S based compounds have been thought to be alternative materials for well-known CuInS2 because of their abundance. Cu–Bi–S based nanomaterials have been less studied. We here report the synthesis, optical and electrical properties of single crystal Cu4Bi4S9 nanowires. High-quality Cu4Bi4S9 nanowires were synthesized through a modified solvothermal route by controlling the reaction sources and temperature. The optical bandgap for Cu4Bi4S9 nanowires were determined by using UV-vis-NIR and cyclic voltammetry techniques. Single nanowire devices were fabricated by using lithographic techniques. The devices exhibit photoconductive response with high external quantum efficiency (2.9 × 108%). Temperature-dependent electrical transport properties were also investigated. We observed that the transport properties of Cu4Bi4S9 nanowire show typical semiconductor behaviour in the temperature region 10–140 K and metal-like character in the temperature region of 150–300 K. The carrier transport in Cu4Bi4S9 nanowires can be described by the small polaron model in temperature region of 60–140 K and the variable range hopping mechanism in temperature region of 10–50 K. We further studied the properties of Cu4Bi4S9 nanowires in field-emission devices. The devices exhibit a relatively low turn-on field (6.9 V μm−1). The potential applications of Cu4Bi4S9 nanowires as field emitting materials and light absorbers in detectors are indicated.