Topic
Variable-range hopping
About: Variable-range hopping is a research topic. Over the lifetime, 3606 publications have been published within this topic receiving 66561 citations.
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TL;DR: In this article, the authors report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination.
Abstract: Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.
399 citations
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TL;DR: In this paper, the synthesis and evidence of Graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene, has been presented, which exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding $10 at room temperature.
Abstract: We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding $10\text{ }\text{G}\ensuremath{\Omega}$ at room temperature. Electron transport in graphene fluoride is well described by variable range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than $100\text{ }\text{k}\ensuremath{\Omega}$ at room temperature. Our approach provides a pathway to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.
387 citations
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TL;DR: The well-known enhanced conductivity of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) thin films that is obtained by addition of high-boiling solvents like sorbitol to the aqueous dispersion used for film deposition is shown to be associated with a rearrangement of PEDOT-rich clusters into elongated domains, as evidenced from STM and AFM.
Abstract: The well-known enhanced conductivity of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) thin films that is obtained by addition of high-boiling solvents like sorbitol to the aqueous dispersion used for film deposition is shown to be associated with a rearrangement of PEDOT-rich clusters into elongated domains, as evidenced from STM and AFM. Consistently, temperature dependent conductivity measurements for sorbitol-treated films reveal that charge transport occurs via quasi ID variable range hopping (VRH), in contrast to 3D VRH for untreated PEDOT:PSS films. The typical hopping distance of 60-90 nm, extracted from the conductivity measurements is consistent with hopping between the 30-40 nm sized grains observed with scanning probe microscopy.
333 citations
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TL;DR: In this paper, the authors report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination.
Abstract: Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.
333 citations
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01 Jan 1991
TL;DR: In this article, Hopping conduction in the critical regime approaching the metal-insulator transition (T.G. Castner) and in the band tails far from equilibrium (D.A. Monroe).
Abstract: Preface. 1. Hopping conduction in the critical regime approaching the metal-insulator transition (T.G. Castner). 2. Hopping in band tails far from equilibrium (D. Monroe). 3. Non-Ohmic microwave hopping conductivity (Yu.M. Galperin, V.L. Gurevich and D.A. Parshin). 4. Thermal conduction due to hopping processes in amorphous solids (A. Jagannathan, R. Orbach and O. Entin-Wohlman). 5. The hopping thermopower (I.P. Zvyagin). 6. Slow processes in disordered solids (M. Pollak and A. Hunt). 7. Hopping conductivity in the intermediate frequency regime (A.R. Long). 8. Hopping in mesoscopic samples (A.B. Fowler, J.J. Wainer and R.A. Webb). 9. Scattering and interference effects in variable range hopping conduction (B.I. Shklovskii and B.Z. Spivak). 10. Hopping conduction in III-V compounds (R. Mansfield). 11. Hopping conduction in electrically conducting polymers (S. Roth). 12. Hopping conduction in heavily doped semiconductors (A.N. Ionov and I.S. Shlimak). Author index. Subject index. Cumulative index.
327 citations