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Voltage-controlled oscillator

About: Voltage-controlled oscillator is a research topic. Over the lifetime, 23896 publications have been published within this topic receiving 231875 citations. The topic is also known as: VCO.


Papers
More filters
Journal ArticleDOI
TL;DR: A low-phase-noise wide-tuning-range oscillator suitable for scaled CMOS processes that switches between the two resonant modes of a high-order LC resonator that consists of two identical LC tanks coupled by capacitor and transformer.
Abstract: In this paper we will present a low-phase-noise wide-tuning-range oscillator suitable for scaled CMOS processes. It switches between the two resonant modes of a high-order LC resonator that consists of two identical LC tanks coupled by capacitor and transformer. The mode switching method does not add lossy switches to the resonator and thus doubles frequency tuning range without degrading phase noise performance. Moreover, the coupled resonator leads to 3 dB lower phase noise than a single LC tank, which provides a way of achieving low phase noise in scaled CMOS process. Finally, the novel way of using inductive and capacitive coupling jointly decouples frequency separation and tank impedances of the two resonant modes, and makes it possible to achieve balanced performance. The proposed structure is verified by a prototype in a low power 65 nm CMOS process, which covers all cellular bands with a continuous tuning range of 2.5-5.6 GHz and meets all stringent phase noise specifications of cellular standards. It uses a 0.6 V power supply and achieves excellent phase noise figure-of-merit (FoM) of 192.5 dB at 3.7 GHz and >; 188 dB across the entire tuning range. This demonstrates the possibility of achieving low phase noise and wide tuning range at the same time in scaled CMOS processes.

165 citations

Journal ArticleDOI
TL;DR: In this paper, a second-order RF bandpass filter based on active inductor has been implemented in a 0.35 /spl mu/m CMOS process, which has 28dB spurious-free-dynamic-range (SFDR) and total current consumption (including buffer stage) is 17 mA with 2.7-V power supply.
Abstract: In this paper, a second-order RF bandpass filter based on active inductor has been implemented in a 0.35 /spl mu/m CMOS process. Issues related to the intrinsic quality factor and dynamic range of the CMOS active inductor are addressed. Tuned at 900 MHz with Q=40, the filter has 28-dB spurious-free-dynamic-range (SFDR) and total current consumption (including buffer stage) is 17 mA with 2.7-V power supply. Experimental results also show the possibility of using them to build higher order RF filter and voltage-controlled oscillator (VCO).

163 citations

Journal ArticleDOI
TL;DR: In this article, a SiGe bipolar production technology was used to design a low-cost differential circuit for millimeter-wave voltage-controlled oscillators (VCOs) with low phase noise and wide tuning range.
Abstract: Millimeter-wave voltage-controlled oscillators (VCOs) are presented which are fully integrated in a SiGe bipolar production technology. The low-cost differential circuits have been designed and optimized for low phase noise and wide tuning range. As an example, by varying the bias voltage of the on-chip varactor, the oscillation frequency can be changed from 36 to 46.9 GHz (i.e., by 26%). In this wide frequency range, phase noise between -107 and -110dBc/Hz at 1-MHz offset frequency and single-ended voltage swing of about 0.95V/sub pp/ /spl plusmn/10% (differential: 1.9V/sub pp/) were measured. The circuit consumes 280mW at -5.5-V supply voltage. The high oscillation frequency and low phase noise at wide tuning range are record values for fully integrated oscillators in Si-based technologies. The basic oscillator was then extended by a cascode stage as an output buffer. Now the VCO performance is no longer degraded if nonperfectly terminated transmission lines are driven. Thus, the chip can be mounted in a low-cost socket; however, at the cost of increased phase noise and power consumption.

161 citations

Proceedings ArticleDOI
18 Jun 2007
TL;DR: A 60GHz CMOS front-end receiver is described, which comprises an LNA, a quadrature-balanced downconversion mixer, a VCO, and a frequency doubler.
Abstract: A 60GHz CMOS front-end receiver is described. The receiver comprises an LNA, a quadrature-balanced downconversion mixer, a VCO, and a frequency doubler. The integrated front-end has a conversion gain of 11.8dB, an NF of 10.4dB, and an input P1dB of -15.8dBm. The receiver is implemented in a digital 0.13mum CMOS process and draws 64mA from a 1.2V supply.

161 citations

Journal ArticleDOI
J.M. Khoury1
TL;DR: In this paper, a fifth-order CMOS continuous-time Bessel filter with a tunable 6-to 15-MHz cutoff frequency is described, which achieves a dynamic range of 55 dB while dissipating 96 mW in a 5-V 0.9-mu m CMOS process.
Abstract: A fifth-order CMOS continuous-time Bessel filter with a tunable 6- to 15-MHz cutoff frequency is described. This fully balanced transconductance-capacitor (G/sub m/-C) leapfrog filter achieves a dynamic range of 55 dB while dissipating 96 mW in a 5-V 0.9- mu m CMOS process. The author reviews the disk drive application and filtering requirements, and explains why the G/sub m/-C continuous-time filtering approach was used. The on-chip master-slave tuning system uses a voltage-controlled oscillator (VCO). Experimental results are presented. >

160 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023168
2022344
2021269
2020388
2019469
2018530