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Voltage regulator

About: Voltage regulator is a research topic. Over the lifetime, 33536 publications have been published within this topic receiving 350859 citations.


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Patent
29 Apr 2003
TL;DR: In this paper, a power management system includes a voltage booster in combination with a voltage regulator to provide a regulated output voltage, which is used to selectively enable/disable the doubling functionality of the voltage booster to increase power conversion efficiency.
Abstract: A power management system includes a voltage booster in combination with a voltage regulator to provide a regulated output voltage. The voltage provided to the voltage regulator is used to selectively enable/disable the doubling functionality of the voltage booster to increase power conversion efficiency.

72 citations

Journal ArticleDOI
TL;DR: In this article, the design and experimental results for a 3.2-V operation single-chip AlGaAs/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (IMMIC) power amplifier for GSM900 and DCS1800 dual-band applications are presented.
Abstract: This paper describes the design and experimental results for a 3.2-V operation single-chip AlGaAs/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (IMMIC) power amplifier for GSM900 and DCS1800 dual-band applications. The following two new circuit techniques are proposed for implementing the power amplifier. One is an on-chip HBT bias switch which in turn switches the amplifier between 900 and 1800 MHz. The proposed switch configuration allows the switch using a high turn-on voltage of 1.3 V of AlGaAs/GaAs HBT's to operate with a 3-V low supply voltage, because the switch circuitry needs no stacked configuration. The other is an active feedback circuit (AFB) to prevent permanent failure of HBT's in the output power stage even under severe conditions of oversupply voltage and strongly mismatching load. Experimental results revealed that the proposed feedback circuit, which works as a voltage limiter, can protect the output stage HBT's from an excessive collector voltage swing even when the amplifier is operated under a condition of a 5-V oversupply voltage and a 10:1 voltage standing-wave ratio (VSWR) mismatching load. Under a normal condition of 3.2 V and a 50-/spl Omega/ matching load, the IC is capable of delivering an output power of 34.5 dBm and a power-added efficiency (PaE) of 52% in a GSM900 mode, and a 32-dBm output power and a 32% PAE in a DCS1800 mode.

72 citations

Patent
24 Mar 1995
TL;DR: In this article, the authors describe the integration of high voltage circuit elements with low voltage and high density transistors all formed by the same fabrication process sequence, which allows the creation of an 18 volt range charge pump using a CMOS process which normally provides only 3 volt operating range transistors.
Abstract: An integrated circuit includes an N isolation buried layer underlying high density and low voltage type P channel and N channel transistors to define islands of arbitrary voltage on the substrate. Thus such transistors, which otherwise are capable only of low voltage operation, become capable of operating at high voltage relative to the substrate. This allows integration, on a single chip, of high voltage circuit elements with low voltage and high density transistors all formed by the same fabrication process sequence. In one example this allows creation of an 18 volts range charge pump using a CMOS process which normally provides only 3 volt operating range transistors. This then allows integration on a single integrated circuit chip of a complex digital logic function such as a UART (universal asynchronous receiver and transmitter) with a high voltage function such as an RS-232 interface, including integrated capacitors for the RS-232 interface charge pump.

72 citations

Proceedings ArticleDOI
28 Oct 2013
TL;DR: In this article, the authors focus on current limiting for voltage controlled inverters during overloads caused by poor transient load sharing between inverters and synchronous generators in islanded microgrids.
Abstract: This paper focuses on current limiting for voltage controlled inverters during overloads caused by poor transient load sharing between inverters and synchronous generators in islanded microgrids. The use of simple current reference saturation limiters can cause instability when the voltage regulator loses control after the current reference saturates. The use of virtual impedance for current limiting is shown to provide stable current limiting when operating in parallel with synchronous generators. Small signal analysis is used to set the virtual impedance magnitude and X/R ratio, and validation is provided by simulation and experimental results.

72 citations

Journal ArticleDOI
TL;DR: Experimental results verify that both the load- and line-transient responses of the proposed LDO are significantly improved, and the settling times during load and line transients are shortened by as much as 33 and 3 times, respectively.
Abstract: A dynamic bias-current boosting technique that concurrently enables ultralow-power operation and fast-transient behavior is presented in this brief. It is applied to an ultralow-power output-capacitor-free low-dropout regulator (LDO) to demonstrate the bandwidth extension provided during the transient periods. The proposed LDO is capable of providing 50 mA of output current with a minimum dropout voltage of 0.1 V. The ultralow-power LDO is implemented in a commercial 0.13-μm CMOS process, with power consumption of 1.20 μW only. Experimental results verify that both the load- and line-transient responses of the proposed LDO are significantly improved, and the settling times during load and line transients are shortened by as much as 33 and 3 times, respectively.

72 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202382
2022212
2021320
2020699
2019947
2018973