Topic
Waveguide (optics)
About: Waveguide (optics) is a research topic. Over the lifetime, 44965 publications have been published within this topic receiving 618942 citations. The topic is also known as: lightguide & waveguide.
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Book•
01 May 1984
TL;DR: In this article, the authors present a general description of wave propagation in nonlinear media, including high-resolution nonlinear optical spectroscopy, and four-wave mixing and mixing.
Abstract: Introduction. Nonlinear Optical Susceptibilities. General Description of Wave Propagation in Nonlinear Media. Electrooptical and Magnetooptical Effects. Optical Rectification and Optical Field-Induced Magnetization. Sum-Frequency Generation. Harmonic Generation. Difference Frequency Generation. Parametric Amplification and Oscillation. Stimulated Raman Scattering. Stimulated Light Scattering. Two-Photon Absorption. High-Resolution Nonlinear Optical Spectroscopy. Four-Wave Mixing. Four-Wave Mixing Spectroscopy. Optical-Field-Induced Birefringence. Self-Focusing. Multiphoton Spectroscopy. Detection of Rare Atoms and Molecules. Laser Manipulation of Particles. Transient Coherent Optical Effects. Strong Interaction of Light with Atoms. Infrared Multiphoton Excitation and Dissociation of Molecules. Laser Isotope Separation. Surface Nonlinear Optics. Nonlinear Optics in Optical Waveguides. Optical Breakdown. Nonlinear Optical Effects in Plasmas. Index.
5,311 citations
TL;DR: A laser cavity formed from a single defect in a two-dimensional photonic crystal is demonstrated and pulsed lasing action has been observed at a wavelength of 1.5 micrometers from optically pumped devices with a substrate temperature of 143 kelvin.
Abstract: A laser cavity formed from a single defect in a two-dimensional photonic crystal is demonstrated. The optical microcavity consists of a half wavelength–thick waveguide for vertical confinement and a two-dimensional photonic crystal mirror for lateral localization. A defect in the photonic crystal is introduced to trap photons inside a volume of 2.5 cubic half-wavelengths, approximately 0.03 cubic micrometers. The laser is fabricated in the indium gallium arsenic phosphide material system, and optical gain is provided by strained quantum wells designed for a peak emission wavelength of 1.55 micrometers at room temperature. Pulsed lasing action has been observed at a wavelength of 1.5 micrometers from optically pumped devices with a substrate temperature of 143 kelvin.
2,310 citations
Book•
01 Jan 1974
TL;DR: The asymmetric slab waveguide weakly guiding optical fibers coupled mode theory applications of the coupled power theory theory of the directional coupler grating-assisted direction couplers approximate and numerical methods nonlinear effects as discussed by the authors.
Abstract: The asymmetric slab waveguide weakly guiding optical fibers coupled mode theory applications of the coupled mode theory coupled power theory theory of the directional coupler grating-assisted direction couplers approximate and numerical methods nonlinear effects.
2,290 citations
TL;DR: It is demonstrated that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix, which opens a route to the fabrication of a silicon laser.
Abstract: Adding optical functionality to a silicon microelectronic chip is one of the most challenging problems of materials research. Silicon is an indirect-bandgap semiconductor and so is an inefficient emitter of light. For this reason, integration of optically functional elements with silicon microelectronic circuitry has largely been achieved through the use of direct-bandgap compound semiconductors. For optoelectronic applications, the key device is the light source--a laser. Compound semiconductor lasers exploit low-dimensional electronic systems, such as quantum wells and quantum dots, as the active optical amplifying medium. Here we demonstrate that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix. Net optical gain is seen in both waveguide and transmission configurations, with the material gain being of the same order as that of direct-bandgap quantum dots. We explain the observations using a model based on population inversion of radiative states associated with the Si/SiO2 interface. These findings open a route to the fabrication of a silicon laser.
2,204 citations
10 Jun 2009
TL;DR: The current performance and future demands of interconnects to and on silicon chips are examined and the requirements for optoelectronic and optical devices are project if optics is to solve the major problems of interConnects for future high-performance silicon chips.
Abstract: We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects for future high-performance silicon chips. Optics has potential benefits in interconnect density, energy, and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a ~ 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few femtofarads or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense wavelength-division multiplexing (WDM) is to be avoided. Free-space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.
1,959 citations