Topic

# Weak localization

About: Weak localization is a research topic. Over the lifetime, 2663 publications have been published within this topic receiving 68821 citations.

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TL;DR: In this article, a review of the progress made in the last several years in understanding the properties of disordered electronic systems is presented, focusing on the metal-to-insulator transition and problems associated with the insulator.

Abstract: This paper reviews the progress made in the last several years in understanding the properties of disordered electronic systems. Even in the metallic limit, serious deviations from the Boltzmann transport theory and Fermi-liquid theory have been predicted and observed experimentally. There are two important ingredients in this new understanding: the concept of Anderson localization and the effects of interaction between electrons in a disordered medium. This paper emphasizes the theoretical aspect, even though some of the relevant experiments are also examined. The bulk of the paper focuses on the metallic side, but the authors also discuss the metal-to-insulator transition and comment on problems associated with the insulator.

4,095 citations

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TL;DR: In this paper, ultrathin epitaxial graphite films were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques.

Abstract: We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically three graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kΩ to 225 kΩ at 4 K, with positive magnetoconductance). Low-resistance samples show characteristics of weak localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 1012 cm-2 per graphene sheet. The most highly ordered sample exhibits Shubnikov−de Haas oscillations that correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic...

3,315 citations

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Kyoto University

^{1}TL;DR: In this article, the effect of the spin-orbit interaction on random potential scattering in two dimensions by the renormalization group method is studied. And the localization behaviors are classified in the three different types depending on the symmetry.

Abstract: Effect of the spin-orbit interaction is studied for the random potential scattering in two dimensions by the renormalization group method. It is shown that the localization behaviors are classified in the three different types depending on the symmetry. The recent observation of the negative magnetoresistance of MOSFET is discussed. In recent experiments on MOSFET by Kawaguchi et al.,u it was found that electrons confined in the MOS inversion layer exhibit the negative magnetoresist ance. This effect is closely related to the localization problem in a random potential. In two dimensions, the quantum inter ference is important and, if the impurity scattering is spin-independent, the con ductivity vanishes at zero temperature even when the scattering is very weak. 2>

2,192 citations

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TL;DR: In this article, a review of the statistical properties of the scattering matrix of a mesoscopic system is presented, where two geometries are contrasted: a quantum dot and a disordered wire.

Abstract: This is a review of the statistical properties of the scattering matrix of a mesoscopic system. Two geometries are contrasted: A quantum dot and a disordered wire. The quantum dot is a confined region with a chaotic classical dynamics, which is coupled to two electron reservoirs via point contacts. The disordered wire also connects two reservoirs, either directly or via a point contact or tunnel barrier. One of the two reservoirs may be in the superconducting state, in which case conduction involves Andreev reflection at the interface with the superconductor. In the case of the quantum dot, the distribution of the scattering matrix is given by either Dyson{close_quote}s circular ensemble for ballistic point contacts or the Poisson kernel for point contacts containing a tunnel barrier. In the case of the disordered wire, the distribution of the scattering matrix is obtained from the Dorokhov-Mello-Pereyra-Kumar equation, which is a one-dimensional scaling equation. The equivalence is discussed with the nonlinear {sigma} model, which is a supersymmetric field theory of localization. The distribution of scattering matrices is applied to a variety of physical phenomena, including universal conductance fluctuations, weak localization, Coulomb blockade, sub-Poissonian shot noise, reflectionless tunneling into a superconductor, and giant conductance oscillationsmore » in a Josephson junction. {copyright} {ital 1997} {ital The American Physical Society}« less

2,072 citations

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TL;DR: The transport properties of disordered solids have been the subject of much work since at least the 1950s, but with a new burst of activity during the 1980s which has survived up to the present day as mentioned in this paper.

Abstract: The transport properties of disordered solids have been the subject of much work since at least the 1950s, but with a new burst of activity during the 1980s which has survived up to the present day. There have been numerous reviews of a more or less specialized nature. The present review aims to fill the niche for a non-specialized review of this very active area of research. The basic concepts behind the theory are introduced with more detailed sections covering experimental results, one-dimensional localization, scaling theory, weak localization, magnetic field effects and fluctuations.

1,466 citations