Topic
Wet oxidation
About: Wet oxidation is a research topic. Over the lifetime, 3094 publications have been published within this topic receiving 61536 citations.
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TL;DR: In this article, the orientation dependence of the thermal oxidation rates in 6H-SiC was investigated and the wet oxidation was performed in steam and in the temperature range of 1000 to 1200 °C.
Abstract: The orientation dependence of the thermal oxidation rates in 6H-SiC has been investigated. The wet oxidation was performed in steam and in the temperature range of 1000 to 1200 °C. The linear rate sharply changes at an off-angle around 30° from the {0001}-face. This large anisotropy in oxidation rate will cause a difficulty in controlling the bird's beak length in LOCOS. The activation energy of the linear rate gradually increases from C-face to Si-face. The situation is quite different from silicon in which the orientation dependence of the activation energy is explained by the steric hindrance.
34 citations
TL;DR: Three weight percent ruthenium catalysts were prepared by incipient-wet impregnation of two different zirconium oxides, and characterized by BET, XRD and TPR, and the catalytic activity of the both catalysts decreased during successive tests.
34 citations
TL;DR: Individual and interactive effects of process variables on the degradation of fermented municipal sludge were examined during wet oxidation and the interaction of temperature and oxygen ratio had significant effect on sludge degradation.
34 citations
TL;DR: In this article, the authors studied the oxidation in water vapor of thick (0.5-2 μm) AlGaAs layers with aluminum contents ranging from 48% to 78% grown by molecular beam epitaxy.
Abstract: We have studied the oxidation in water vapor of thick (0.5–2 μm) AlGaAs layers with aluminum contents ranging from 48% to 78% grown by molecular beam epitaxy. The oxidation rate was measured as a function of the aluminum content, the temperature and the flow rate of the N2 carrier gas supplying the water vapor. The oxide films proved to be mechanically very stable and the growth was found to be linear with time also in the case of an excessive supply of water vapor. The activation energies for the wet oxidation of AlGaAs were determined to increase from 1.1 to 1.8 eV for the Al contents decreasing from 78% to 48%.
33 citations
TL;DR: In this paper, a mathematical model of oxidation of SixGe1−x alloys is presented, where the growth of SiO2 is simulated in conjunction with the determination of silicon distribution in SixGe 1−x using numerical methods.
Abstract: A mathematical model of oxidation of SixGe1−x alloys is presented. The growth of SiO2 is simulated in conjunction with the determination of silicon distribution in SixGe1−x using numerical methods. The main feature of the model is the assumption of simultaneous oxidation of germanium and silicon when exposing the SixGe1−x to an oxidizing atmosphere. In accordance with thermodynamics, the GeO2 formed is subsequently reduced by the (free) silicon available at the interface between the growing SiO2 and the remaining SixGe1−x through a reduction reaction. Thus, the enhanced oxidation of silicon in the presence of germanium is modeled as a result of the rapid oxidation of germanium followed by the quick reduction of GeO2 by silicon. The growth of a mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 only occurs when the supply of silicon to the SiO2/SixGe1−x interface is insufficient. A comparison is made between simulation and experiment for wet oxidation (in pyrogenic steam) of polycrystalline SixGe1−x ...
33 citations