Wet oxidation

About: Wet oxidation is a research topic. Over the lifetime, 3094 publications have been published within this topic receiving 61536 citations.

Corrosion of thin film cobalt based magnetic recording media

Abstract: Corrosion resistance of cobalt based magnetic recording media with and without carbon overcoats was investigated. Wet oxidation of unprotected alloys led to the preferential formation of cobalt oxide and hydroxide. Cobalt migration through carbon was discovered at ambient conditions and elevated temperature and humidity. This corrosion process is electrochemical, involving cobalt dissolution in adsorbed water, migration of cobalt ions through permeable carbon and precipitation of cobalt rich particles on the carbon surface.

A novel way to treat refractory waste: Sonication followed by wet oxidation (SONIWO)

Abstract: The effectiveness of the hybrid system sonication followed by wet oxidation (SONIWO) to treat otherwise refractory waste has been demonstrated. In such a hybrid system homogeneous CuSO 4 catalyst was found to be very efficient.

Method for treating waste water

Abstract: In wet-oxidizing organic waste water containing cyanogen ie inorganic-CN, or a compound capable of forming cyanogen under oxidative conditions, if the wet oxidation is conducted in the presence of copper or a copper compound and a specific ammonium salt, COD and the cyanogen concentration can be reduced at highly improved removal ratios Copper ions resulting from the copper component made present at the wet oxidation step can be effectively removed by precipitation or ion exchange Accordingly, this treatment method does not cause secondary pollution at all In case recovery of the copper ions is performed by ion exchange, good results are obtained when the oxidized liquid from the wet oxidation step is flashed at a temperature higher than 100° C and the pH of the oxidized liquid is adjusted to 4-7 after the cyanogen decomposition step but before the ion exchange treatment A weakly acidic ion exchange resin is preferably employed When recovery of the copper ions is performed by precipitation, good results are obtained when sulfide type insolubilizing agents are employed

Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

Abstract: The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer.