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Wet oxidation

About: Wet oxidation is a research topic. Over the lifetime, 3094 publications have been published within this topic receiving 61536 citations.


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Journal Article
TL;DR: In this article, the authors treated pulp and paper mill effluent (COD= 0.7 kg/m 3 ) for the removal of non-biodegradable and toxic compounds by wet air oxidation using heterogeneous catalysts.
Abstract: Pulp and paper mill effluent (COD= 0.7 kg/m 3 ) was treated for the removal of non-biodegradable and toxic compounds by wet air oxidation (WAO) using heterogeneous catalysts. The catalysts include (CuO-ZnO) supported on alumina and ceria as well as lanthanum based perovskites. The activity tests were carried out at 95 ο C under atmospheric pressure conditions. A maximum COD reduction of 83 per cent for (CuO-ZnO)/CeO 2 catalyst was obtained in 2 h reaction time at a catalyst conc. of 5 kg/m 3 and the initial pH of wastewater sample at 3.0. LaCoO 3 catalyst showed the maximum COD reduction in the basic medium (pH 9.0), whereas the two other catalysts were active in acidic region.

62 citations

Journal ArticleDOI
TL;DR: In this article, the behavior of a packed bed reactor in the catalytic liquid-phase oxidation of aqueous phenol with two modes of operation, downflow and upflow, was investigated.

62 citations

Journal ArticleDOI
TL;DR: In this paper, three important processes dominate the wet thermal oxidation of AlGaAs on GaAs: formation and elimination of crystalline and amorphous elemental As, and crystallization of the amorphized oxide film.
Abstract: Three important processes dominate the wet thermal oxidation of AlxGa1−xAs on GaAs: (1) oxidation of Al and Ga in the AlxGa1−xAs alloy to form an amorphous oxide, (2) formation and elimination of crystalline and amorphous elemental As and of amorphous As2O3, and (3) crystallization of the amorphous oxide film. Residual As can lead to strong Fermi-level pinning at the oxidized AlGaAs/GaAs interface, up to a 100-fold increase in leakage current, and a 30% increase in the dielectric constant of the oxide layer. Thermodynamically favored interfacial As may impose a fundamental limitation on the use of AlGaAs wet oxidation in metal-insulatorsemiconductor devices in the GaAs material system.

61 citations

Journal ArticleDOI
TL;DR: In this article, the photo-oxidation process and the corresponding passivation effects on the optical properties of unintentionally doped n-type gallium nitride (GaN) were investigated and threefold enhancement in the photocurrent and photoluminescence response were observed on the oxidized GaN surfaces.
Abstract: We investigate the photo-oxidation process and the corresponding passivation effects on the optical properties of unintentionally doped n-type gallium nitride (GaN). When illuminated with a 253.7 nm mercury line source, oxidation of GaN is found to take place in aqueous phosphorus acid solutions with pH values ranging from 3 to 4. At room temperature, the photo-oxidation process is found reaction-rate limited and has a peak value of 224 nm/h at pH=3.5. Compared with the as-grown GaN layers, threefold enhancement in the photocurrent and photoluminescence response are observed on the oxidized GaN surfaces. These results are attributed to the surface passivation effects due to the deep ultraviolet-enhanced wet oxidation on GaN.

61 citations

Journal ArticleDOI
TL;DR: In this article, an integrated membrane-wet oxidation (MEMWO) has been demonstrated to treat the disperse dye bath waste, where a nanofiltration membrane (MPT 30) showed >99% color and 97% chemical oxygen demand (COD) rejection of dye compound.

61 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202314
202233
202171
202096
2019116
2018128