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X-ray lithography

About: X-ray lithography is a research topic. Over the lifetime, 5302 publications have been published within this topic receiving 70850 citations.


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Patent
09 Nov 2000
TL;DR: In this paper, a method and system of interference lithography (also known as interferometric lithography or holographic lithography) which utilizes phase-locked, scanning beams is presented.
Abstract: A method and system of interference lithography (also known as interferometric lithography or holographic lithography) which utilizes phase-locked, scanning beams (so-called scanning beam interference lithography, or SBIL). The invention utilizes a high-precision stage (30) that moves a substrate (17) under overlapped and interfering pairs of coherent beams. The overlapped beams interfere, generating fringes, which form a pattern 'brush' for subsequent writing of periodic and quasi-periodic patterns on the substrate. The phase of the fringes in the overlapped region is phase-locked to the motion of the precision stage. The invention includes methods for forming, overlapping, and phase-locking interfering pairs of beams on a variety of substrates; methods for measuring and controlling the period, phase, and angular orientation of fringes generated by the overlapping beams; and methods for measuring and controlling the effects of stage mechanical and thermal drift and other disturbances during the writing process.

265 citations

Proceedings ArticleDOI
Soichi Owa1, Hiroyuki Nagasaka1
25 Jun 2003
TL;DR: In this paper, it was shown that water (n = 144) has been found as the best liquid for the ArF immersion lithography in the case of 193nm exposure, and that water has an equivalent performance to F2 (157nm) dry (NA=085 to 093).
Abstract: Imaging performance and issues of immersion lithography are discussed with the results of the recent feasibility studies Immersion lithography has advantage in the numerical aperture of optics by a factor of refractive index n of the liquid filled into the space between the bottom lens and wafer In case of 193nm exposure, water (n = 144) has been found as the best liquid It is shown, by using imaging simulations, that ArF (193nm) immersion lithography (NA=105 to 123) has equivalent performance to F2 (157nm) dry (NA=085 to 093) lithography Six fundamental issues in the ArF immersion lithography are investigated and studied Results of the study indicate that there are no “show stoppers” that prevent going into the next phase of feasibility study

247 citations

Journal ArticleDOI
TL;DR: In this paper, an apparatus for deep-ultraviolet interferometric lithography is described, in which the interfering beams illuminate the substrate through a fused silica prism and a layer of index-matching liquid.
Abstract: An apparatus for deep-ultraviolet interferometric lithography is described, in which the interfering beams illuminate the substrate through a fused silica prism and a layer of index-matching liquid. The liquid-immersion technique was found to be compatible with a commercially available, chemically amplified photoresist. The apparatus was used with a 257 nm light source to write gratings having a period of 97 nm and linewidth of approximately 40 nm.

242 citations

Journal ArticleDOI
TL;DR: In this article, the basic principles of interference lithography (IL) are described and a review of the most powerful and relatively inexpensive methodologies for creating large-area patterns with micron-to sub-micron periodicities is presented.
Abstract: In this review the basic principles of interference lithography (IL) are described. IL is emerging as one of the most powerful yet relatively inexpensive methodologies for creating large-area patterns with micron- to sub-micron periodicities. N-dimensional periodic structures (N ≤ 3) can be obtained by interfering (N + 1) non-coplanar beams in a photoresist. The symmetry and shape of the "unit cell" can be conveniently controlled by varying the intensities, geometries, polarizations, and phases of the beams involved. IL done with shorter wave-length lasers and/or liquid immersion lithography can create features with sub-50nm dimensions. Such periodic structures are beginning to find wide use in photonic crystal science, optical telecommunications, data storage, and the integrated circuit industry. Newer innovations such as diffraction element assisted lithography or DEAL and phase-controlled IL for making two-dimensional structures are also discussed. SEM images of two-dimensional patterns created by three-beam non-coplanar interference lithography. The upper left hand image corresponds to the case when the phases of the three beams used to make the exposure are equal. The remaining images correspond to situations where one laser beam has been given a different phase relative to the other two beams when making the exposure.

237 citations

Journal ArticleDOI
TL;DR: This communication presents a novel class of photoresist systems, an example of which is successfully applied to DLW, and argues and shows that commercially available photoinitiators and photoresists containing them are far from ideal for the purpose of STED-DLW.
Abstract: two-photon excitation fluoscence a) The concept of stimulated emission depletion (STED) fl uorescence microscopy introduced by Stefan W. Hell has recently revolutionized the fi eld of optical microscopy [ 1–4 ] and has led to important applications in biology. [ 5 , 6 ] Spectacular lateral spatial resolutions down to less than 10 nm have been reported. [ 7 ] Conceptually, in sharp contrast to what was commonly believed for decades, the “diffraction limit” of far-fi eld optical microscopy is no longer a limit. Obviously, it would be highly desirable to translate this tremendous resolution enhancement in laser-scanning optical microscopy into a corresponding advance in optical lithography , especially in two-photon direct-laser-writing (DLW). [ 8–10 ] DLW can be viewed as the three-dimensional analogue of two-dimensional (planar) electron-beam lithography. If arbitrary nanostructures could be made by STED-DLW with feature sizes of 10 nm in all three dimensions, a nanotechnologists’ dream would come true. However, the step from microscopy to lithography is not simple at all and particularly requires developing suitable photoresist material systems. [ 3 ] Early work on DLW inspired by STED has used one-photon absorption [ 11 ] or one-color schemes. [ 12 ] Both results have been highly encouraging, but they do not yet allow for complete fl exibility in three-dimensional lithography. In contrast to this work, [ 11 , 12 ] our approach is to directly beat the inter-system crossing rate of the photoinitiator molecules by effi cient stimulated emission. As we will argue and show by experiments below, commercially available photoinitiators and photoresists containing them are far from ideal for the purpose of STED-DLW. Thus, in this communication, we present a novel class of photoresist systems, an example of which is successfully applied to DLW. In regular DLW, femtosecond laser pulses are very tightly focused into the volume of a photoresist. [ 8–10 ] By means of twophoton absorption, only a tiny volume is suffi ciently exposed by the light. By computer-controlled scanning of the relative positions of focus and resist via piezoelectric actuators, almost

231 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202310
202227
20215
20207
201910
201814