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XANES

About: XANES is a research topic. Over the lifetime, 7737 publications have been published within this topic receiving 188032 citations.


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TL;DR: In this paper, the coordination of carbon atoms in diamond-like carbon (DLC) thin films formed by Ar gas cluster ion beam (GCIB) assisted deposition using fullerene as the carbon source was investigated by measuring near-edge X-ray absorption fine structure (NEXAFS) spectra of the carbon K-edge over the excitation energy range 275-320 eV, using synchrotron radiation.
Abstract: The coordination of carbon atoms in diamond-like carbon (DLC) thin films formed by Ar gas cluster ion beam (GCIB) assisted deposition using fullerene as the carbon source was investigated by measuring near-edge X-ray absorption fine structure (NEXAFS) spectra of the carbon K-edge over the excitation energy range 275–320 eV, using synchrotron radiation. With attention to the peak corresponding to the transition of the excitation electron from a carbon 1s orbital to a π* orbital, relative sp2 contents of various DLC films were estimated. The sp2 contents of the DLC films formed by the GCIB-assisted deposition were observed to be lower than those of the DLC films formed by other methods. The hardness value measured with a nano-indentation technique was found to be strongly related to the sp2 content of the DLC film.

69 citations

Journal ArticleDOI
TL;DR: In this article, small amounts (∼1%) of tetrahedral boron were detected in binary B2O3-SiO2 glasses using B K-edge X-ray absorption near-edge structure (XANES) spectroscopy.
Abstract: Glasses in the systems Na2O–B2O3–SiO2 (with 50, 60 and 70 mol% SiO2) and K2O–B2O3–SiO2 (with 50 mol% SiO2) have been prepared by melt quenching in air and studied using B K-edge X-ray absorption near-edge structure (XANES) spectroscopy to estimate the proportion of four-fold coordinated (tetrahedral) boron. The B K-edge XANES spectra are characterized by three prominent features: a sharp peak at ∼194 eV (the edge feature of trigonal B), a broader peak at 198–200 eV (the edge feature of tetrahedral B), and a broad peak at 201–204 eV, which is associated with contributions from both trigonal BO3 and tetrahedral BO4 groups. Using the fluorescence yield method to collect spectra, the proportion of tetrahedral B obtained for sodium borosilicate glasses is in good agreement with previous wide line 11B NMR results for R (molar Na2O/B2O3) in the range 0–1.0. The yield of tetrahedral B is consistent with the Bray et al. model for structural change in borate and borosilicate glasses, and indicates that the onset of depolymerization of silicate entities is at about R=0.33. The XANES peaks shift systematically to lower energy with addition of Na2O, reflecting a progressive decrease in positive charge on absorber atoms. For the first time, small amounts (∼1%) of tetrahedral B have been detected in binary B2O3–SiO2 glasses. Glass particles have slightly more tetrahedral B in surface and near-surface layers than in the bulk interior.

69 citations

Journal ArticleDOI
TL;DR: In this article, X-ray absorption and photoelectron spectra of polyaniline were investigated in order to characterize the chemical bonding of its nitrogen atoms, and the identification of neutral and charged nitrogen groups is of special interest.

69 citations

Journal ArticleDOI
TL;DR: In this article, a wide variety of metal-free amorphous hydrocarbon (a-C:H) and Ti-containing hydrocarbons (Ti-C-H) coatings were synthesized using reactive magnetron sputter deposition and inductively coupled plasma assisted hybrid physical vapor deposition (PVD)/chemical vapor deposition(CVD).

69 citations

Journal ArticleDOI
TL;DR: In this paper, the chemical composition of the Si/SiO2 quantum well was studied by Auger electron spectroscopy depth profile and the crystalline structure of the well was confirmed by x-ray photoelectron diffraction.
Abstract: Based on epitaxial layer transfer silicon on insulator wafers, crystalline Si/SiO2 quantum wells have been made. The chemical composition of the quantum wells was studied by Auger electron spectroscopy depth profile. The crystalline structure of the well was confirmed by x-ray photoelectron diffraction. Band-edge shifts in the conduction-band minimum and in the valence-band maximum were measured by using synchrotron x-ray absorption near-edge spectroscopy and by using laboratory x-ray photoelectron spectroscopy, respectively. It is found that the energy gaps of the quantum wells increase as the Si layer is reduced to below 3 nm, as expected for well-defined quantum wells. The experimental data provide direct evidence of a quantum-confined band-gap increase, which has been theoretically predicted for the crystalline Si/SiO2 quantum-well system.

69 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023186
2022403
2021212
2020232
2019242
2018256