Zirconium

About: Zirconium is a research topic. Over the lifetime, 31104 publications have been published within this topic receiving 397522 citations. The topic is also known as: Zr & element 40.

Refractory Diborides of Zirconium and Hafnium

Abstract: This paper reviews the crystal chemistry, synthesis, densification, microstructure, mechanical properties, and oxidation behavior of zirconium diboride (ZrB2) and hafnium diboride (HfB2) ceramics. The refractory diborides exhibit partial or complete solid solution with other transition metal diborides, which allows compositional tailoring of properties such as thermal expansion coefficient and hardness. Carbothermal reduction is the typical synthesis route, but reactive processes, solution methods, and pre-ceramic polymers can also be used. Typically, diborides are densified by hot pressing, but recently solid state and liquid phase sintering routes have been developed. Fine-grained ZrB2 and HfB2 have strengths of a few hundred MPa, which can increase to over 1 GPa with the addition of SiC. Pure diborides exhibit parabolic oxidation kinetics at temperatures below 1100°C, but B2O3 volatility leads to rapid, linear oxidation kinetics above that temperature. The addition of silica scale formers such as SiC or MoSi2 improves the oxidation behavior above 1100°C. Based on their unique combination of properties, ZrB2 and HfB2 ceramics are candidates for use in the extreme environments associated with hypersonic flight, atmospheric re-entry, and rocket propulsion.

Unusual and Highly Tunable Missing-Linker Defects in Zirconium Metal–Organic Framework UiO-66 and Their Important Effects on Gas Adsorption

Abstract: UiO-66 is a highly important prototypical zirconium metal–organic framework (MOF) compound because of its excellent stabilities not typically found in common porous MOFs. In its perfect crystal structure, each Zr metal center is fully coordinated by 12 organic linkers to form a highly connected framework. Using high-resolution neutron power diffraction technique, we found the first direct structural evidence showing that real UiO-66 material contains significant amount of missing-linker defects, an unusual phenomenon for MOFs. The concentration of the missing-linker defects is surprisingly high, ∼10% in our sample, effectively reducing the framework connection from 12 to ∼11. We show that by varying the concentration of the acetic acid modulator and the synthesis time, the linker vacancies can be tuned systematically, leading to dramatically enhanced porosity. We obtained samples with pore volumes ranging from 0.44 to 1.0 cm3/g and Brunauer–Emmett–Teller surface areas ranging from 1000 to 1600 m2/g, the l...

Hafnium and zirconium silicates for advanced gate dielectrics

Abstract: Hafnium and zirconium silicate (HfSixOy and ZrSixOy, respectively) gate dielectric films with metal contents ranging from ∼3 to 30 at. % Hf, or 2 to 27 at. % Zr (±1 at. % for Hf and Zr, respectively, within a given film), have been investigated, and films with ∼2–8 at. % Hf or Zr exhibit excellent electrical properties and high thermal stability in direct contact with Si. Capacitance–voltage measurements show an equivalent oxide thickness tox of about 18 A (21 A) for a 50 A HfSixOy (50 A ZrSixOy) film deposited directly on a Si substrate. Current–voltage measurements show for the same films a leakage current of less than 2×10−6 A/cm2 at 1.0 V bias. Hysteresis in these films is measured to be less than 10 mV, the breakdown field is measured to be EBD∼10 MV/cm, and the midgap interface state density is estimated to be Dit∼1–5×1011 cm−2 eV−1. Au electrodes produce excellent electrical properties, while Al electrodes produce very good electrical results, but also react with the silicates, creating a lower e l...

Less Common Metals

Abstract: A-review is given on developments and improvements in process technology for fabricating beryllium, chromium, hafnium, molybdenum, niobium, rhenium, tantalum, tungsten, and zirconium. The references given cover the period June 1960 through May 1961. (N.W.R.)