The two-dimensional electron gas (2DEG) is a widely used model for the electrons in the inversion layer of certain MOSFET devices. The sensitivity of a number of physical quantities of the 2DEG to a proper treatment of many-body effects has been examined. This was achieved by calculating the plasmon dispersion, pair correlation function, exchange and correlation energy and the self-energy at the Fermi level using three different approximations to the many-body problem, namely: (i) the RPA; (ii) the Hubbard approximation (HA); and (iii) the self-consistent STLS approximation of Singwi et al. (1968). The RPA and HA were found to be less satisfactory approximations for a 2DEG than for a 3DEG.

https://iopscience.iop.org/article/10.1088/0022-3719/9/16/012/pdf

Electron correlations in inversion layers

Electron scattering in silicon inversion layers by oxide and surface roughness

Interface states at the SiO2-Si interface

The purpose of this paper is to present results on and discuss the origin of Anderson localization in the inversion layer. Evidence is given for the existence of both negative and positive charges at the Si/SiO$\_{2}$ interface. The negative charges contribute at least in part to the slow states at the Si/SiO$\_{2}$ interface. The origin of these charges is discussed and a model proposed which provides an explanation of the conflicting reports on the value of minimum metallic conductivity, and the change in the extent of the localization as the distance between the carriers and the Si/SiO$_{2}$ interface is changed. It is suggested that in a two dimensional system long range potential fluctuations increase the minimum metallic conductivity above the value predicted, and found experimentally, for (the Anderson model with) short range potential fluctuations.

A. B. Fowler

Papers

Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers