A method for fabricating a thin film resistor comprises applying a tantalum nitride layer over a dielectric layer, applying a metallization layer over the tantalum nitride layer, and patterning the metallization layer with a first portion of the metallization layer situated apart from a second portion of the metallization layer and both the first and second portions being at least partially situated on the tantalum nitride layer. In one embodiment, after patterning the metallization layer, the resistance value between the first and second portions of the metallization layer is determined and compared to a predetermined resistance value, and at least one of the first and second portions is trimmed to obtain a modified resistance value between the first and second portions that is closer to the predetermined resistance value than the determined resistance value.

Method of forming thin film resistors on organic surfaces

Precision electrical trimming of stacked Si/SiGe polycrystalline resistors available from the extrinsic base structure of a SiGe BiCMOS technology has been demonstrated for the first time. It is shown that pulse current trimming techniques can be used to trim the poly-SiGe resistors by up to 50% from their original values with accuracy better than /spl plusmn/0.5%. The temperature coefficient of resistance (TCR) is shown to be linearly proportional to the percent change in electrically trimmed poly-SiGe resistance. Finally, we demonstrate resistance cycling using an electrical trim/recovery sequence, indicating that the technique is reversible and is governed by dopant segregation/diffusion mechanisms. The results are consistent with those obtained on conventional polysilicon resistors suggesting that the introduction of a strained SiGe layer does not adversely affect the electrical trim properties of these resistors.

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Precision electrical trimming of very low TCR poly-SiGe resistors

Pulse current trimming to adjust values of polysilicon resistors has been investigated for use in full scale IC production. The technique is remarkably accurate, layout efficient, quick and inexpensive from a test perspective, and requires no additional process complexity. The trim process is shown to be reversible to a small, but usable extent for n-type polysilicon. A new physical model consistent with all observations for resistance trim and recovery is presented. Finally, reliability results from extensive burn-in show the trimmed resistors to be exceptionally robust. >

Polysilicon resistor trimming for packaged integrated circuits

A method is provided for the manufacture of precision electronic components such as resistors, inductors, and capacitors on a polymer or ceramic surface. The electronic components can be deposited and trimmed to precise or matched values without having precise depositions of all of the pre-patterned materials. Thin film electronic components are deposited on a surface, parameter values are measured or estimated, a correction offset file is generated, and the components are trimmed using adaptive lithography to a very close tolerance. A computer program can be used to enable the adjustment of electronic components by techniques such as changing the physical length of an inductor coil or resistor lead, or by changing a capacitor plate area.

Method for fabricating a thin film resistor

Method for fabricating a thin film capacitor

Laser resistor trimming, an effective tool for producing accurate and reliable electrical elements is discussed. Laser trimming has minimum effect on power handling capability; element value variation with time, temperature, and voltage; and electrical noise. The principles of laser trimming, laser types used, trimming techniques, and technology trends are described. Laser cutting of ceramics in such applications as electronic packaging and the use of lasers to pattern thin films are also discussed. >

A. Elshabini-Riad

Papers

Lightly trimming the hybrids