A
A. L. Vikharev
Researcher at Russian Academy of Sciences
Publications - 121
Citations - 958
A. L. Vikharev is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Diamond & Microwave. The author has an hindex of 16, co-authored 105 publications receiving 817 citations.
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Journal ArticleDOI
Influence of CVD diamond growth conditions on nitrogen incorporation
M. A. Lobaev,A. M. Gorbachev,S. A. Bogdanov,A. L. Vikharev,D.B. Radishev,Vladimir A. Isaev,V. V. Chernov,M. N. Drozdov +7 more
TL;DR: In this article, nitrogen delta doping allows the creation of high-density NV-center ensembles with nanometer-precision depth control, and the growth of ultra-thin nitrogen doped delta layers with peak nitrogen concentration ~1019 cm−3 and thickness ~ 3 nm.
Journal ArticleDOI
Diamond films grown by millimeter wave plasma-assisted CVD reactor
A. L. Vikharev,A. M. Gorbachev,A.V. Kozlov,V. A. Koldanov,A.G. Litvak,N.M. Ovechkin,D.B. Radishev,Yu.V. Bykov,M. Caplan +8 more
TL;DR: In this article, polycrystalline diamond films are grown on silicon substrates with 60-90 mm diameter and the growth rate of diamond films, their quality and morphology at wide variation of process parameters (gas pressure, substrate temperature, microwave power, methane and argon concentrations) in gas mixture Ar/H2/CH4 are investigated.
Journal ArticleDOI
Novel microwave plasma‐assisted CVD reactor for diamond delta doping
A. L. Vikharev,A. M. Gorbachev,M. A. Lobaev,A. B. Muchnikov,D.B. Radishev,Vladimir A. Isaev,V. V. Chernov,S. A. Bogdanov,M. N. Drozdov,J.E. Butler +9 more
TL;DR: In this paper, a novel chemical vapor deposition (CVD) reactor for diamond delta-doping has been proposed, which provides the creation of ultra-sharp interfaces between doped and undoped material and minimizes the prolonged "tails" formation in the doping profile.
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Numerical modeling of a microwave plasma CVD reactor
TL;DR: In this article, the results of numerical simulation of a microwave CVD reactor operating in CW and pulsed regimes were presented, and the possibility to use the pulse-periodic regime of discharge for deposition of diamond films has been analyzed.
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Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations
TL;DR: In this article, the growth rate of a single crystal diamond up to 20 µm/h was investigated in a 2.45 GHz microwave plasma chemical vapor deposition (CVD) reaction at high microwave power density.