Transparent conductors as solar energy materials: A panoramic review

TCO and light trapping in silicon thin film solar cells

Heavily doped zinc oxide films are used as transparent and conductive electrodes, especially in thin film solar cells. Despite decades of research on zinc oxide it is not yet clear what the lower limit of the resistivity of such films is. Therefore, the electrical parameters of zinc oxide films deposited by magnetron sputtering, metal organic chemical vapour deposition and pulsed laser ablation are reviewed and related to the deposition parameters. It is found that the lowest resistivities are in the range of 1.4 to 2×10-4 Ω cm, independently of the deposition method. The highest reported Hall mobilities are about 60 cm2 V-1 s-1. The thin film electrical data are compared with the corresponding values of single crystalline zinc oxide and with that of boron and phosphorous doped crystalline silicon. From this comparison it can be seen that the dependence of the Hall mobilities on the carrier concentration n are quite similar for silicon and zinc oxide. In the region n>5×1020 cm-3, which is most important for the application of zinc oxide as a transparent and conductive electrode, phosphorous doped silicon has a mobility only slightly higher than zinc oxide. The experimental data on the electron and hole mobilities in silicon as a function of the impurity concentration have been described by a fit function (Masetti et al 1983), which can also be applied with different fitting parameters to the available zinc oxide mobility data. A comparison of the experimental data with the well known ionized impurity scattering theories of Conwell-Weisskopf (1946) and Brooks-Herring-Dingle (1955) shows that these theories are not able to describe the data very well, even if the non-parabolic band structure is taken into account. As in the case of silicon, an additional reduction of the mobility also occurs for zinc oxide for concentrations n>5×1020 cm-3, which can be ascribed qualitatively to the clustering of charge carriers connected with increased scattering due to the Z-2 dependence of the scattering cross section on the charge Z of the scattering centre. The presented review of the charge carrier transport in zinc oxide indicates that a physical limit due to ionized impurity scattering is reached for homogeneously doped layers. Due to the universal nature of this limitation it is suggested that it also applies to the other important materials indium-tin (ITO) and tin oxide. Experiments are proposed to overcome this limit.

https://iopscience.iop.org/article/10.1088/0022-3727/34/21/301/pdf

Resistivity of polycrystalline zinc oxide films: current status and physical limit

The progress in the development and understanding of interfacial materials for organic photovoltaics (OPV) is reviewed. The proper choice of interface materials is a must for highly efficient and stable OPV devices and has become a significant part of the OPV research today. Interface materials are either non-conducting, semiconducting or conducting layers which not only provide selective contacts for carriers of one sort, but can also determine the polarity of OPV devices, affect the open-circuit voltage, and act as optical spacers or protective layers. In this review both inorganic and organic interface materials are discussed with respect to their function in the OPV device.

Interface materials for organic solar cells

This study addresses the material properties of magnetron-sputtered aluminum-doped zinc oxide (ZnO:Al) films and their application as front contacts in silicon thin-film solar cells. Optimized films exhibit high conductivity and transparency, as well as a surface topography with adapted light-scattering properties to induce efficient light trapping in silicon thin-film solar cells. We investigated the influence on the ZnO:Al properties of the amount of alumina in the target as well as the substrate temperature during sputter deposition. The alumina content in the target influences the carrier concentration leading to different conductivity and free carrier absorption in the near infrared. Additionally, a distinct influence on the film growth of the ZnO:Al layer was found. The latter affects the surface topography which develops during wet-chemical etching in diluted hydrochloric acid. Depending on alumina content in the target and heater temperature, three different regimes of etching behavior have been i...

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The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells

Texture etched ZnO:Al coated glass substrates for silicon based thin film solar cells

We found that sputtered ZnO:Al films with an appropriate compact structure develop a surface texture during etching in diluted HCl with excellent optical and light trapping properties. Moreover, these texturable films have a high optical transmission and good electrical properties which are not affected by the etching process. An analysis of the film structure by HRSEM is presented. High short-circuit currents have been achieved for a-Si:H solar cells incorporating these films as TCO substrates.

http://ieeexplore.ieee.org/iel4/5262/14261/00654189.pdf

A. Loffl

Papers

Texture etched ZnO:Al coated glass substrates for silicon based thin film solar cells

Texture etched Al-doped ZnO: a new material for enhanced light trapping in thin film solar cells

Texture Etched Aluminium Doped Zinc Oxide-Structural and Electrical Properties