The paper presents the experimental results of silicon cathodic arc evaporation in a continuous mode with the superimposed external arched magnetic field. Volt-ampere characteristics are obtained for arc discharge and the cathode spot velocity is determined at different external magnetic field. It is shown that the erosion rate of the silicon cathode surface depends on the magnetic field. Silicon coatings obtained by using a continuous mode of cathodic arc deposition, demonstrate the silicon droplet diameter ranging from 30 nm to 5 μm. Experiments show a decrease in the droplet number density and the volume fraction in coatings with increasing magnetic field.

Cathodic Arc Evaporation of Polycrystalline Silicon

The features of the formation of tungsten-deuterium films on a silicon substrate during the sputtering of a tungsten target in magnetron discharge deuterium plasma are studied. Scanning electron microscopy reveals the presence of blistered regions on the surface of the film; the concentration of these regions depends on the target-substrate distance. This distance is also responsible for the concentration of deuterium trapped in the films, which is determined by elastic recoil detection analysis. It is assumed that the deuterium retained by the film is located in pores and surface blisters that form the observed bulged regions. A possible cause of the formation of blisters and pores is the low solubility of deuterium in the Si substrate and the W film.

A. M. Zimin

Papers

Effect of deuterium on thin-film formation during tungsten sputtering in magnetron discharge deuterium plasma