Showing papers by "A. Paul Alivisatos published in 1991"
Patent•
22 Nov 1991TL;DR: In this article, the authors show that continuous semiconductor films in the 0.25 to 25 nm thickness range can be formed with minimal thermal exposure, at temperatures as much as 250, 500, 750 or even 1000° K below their bulk melting point.
Abstract: Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000° K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.
212 citations