Structure and chemical compositions of the interface layer obtained after nickel deposition on silicon carbide surface and subsequent annealing have been analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray diffraction (XRD) and Raman spectroscopy. Nickel silicide (Ni 2 Si) were characterized as the main product of reaction between nickel and silicon carbide after annealing at temperatures range 700–1000 °C. Raman spectroscopy and TOF-SIMS profiling results confirmed carbon precipitation within contact layer. Obtained results indicate graphitic form of carbon and its non-uniform distribution in the contact layer. Moreover, TOF-SIMS analysis showed modification of nitrogen distribution in the contact area upon Ni/SiC contact annealing.

Investigation of microstructure and chemical composition of Ni contacts to n-type 4H–SiC

The effect of low temperature thermal treatment on structural and chemical composition of a-C film with nc-G admixture studied by Raman spectroscopy

New possibilities offered by the method of secondary ion mass spectrometry (SIMS) for analysis of the phase composition of carbon-containing materials are considered. Differences are established between the mass spectra of three carbon phases: diamond, diamond-like carbon (DLC), and graphite. A simple algorithm for the quantitative determination of different phases in two-phase systems diamond–graphite and DLC–graphite is proposed that is based on the measurement of relative intensities of secondary cluster ions such as C8/C5 and CsC8/CsC4. It is shown that nonuniform depth profiles of various carbon phases are formed in diamond structures upon laser cutting and in DLC structures upon thermal annealing.

A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials

ToF‐SIMS depth profiles on Argon‐implanted amorphous carbon. Damage effect and hydrogen characterization

We have studied a new approach to the analysis of carbon-containing materials by secondary ion mass spectrometry (SIMS), which allows determining the contents of carbon atoms in sp2 and sp3 hybridization states. According to this, the main SIMS parameter characterizing the atomic concentration N(sp3) is defined as the intensity ratio of C8/C7 secondary cluster ion peaks. Based on the results of SIMS analysis of several test compositions, a calibration dependence of N(sp3) versus C8/C7 peak intensity ratio has been obtained. The depth profiles of N(sp3) for diamond-like carbon (DLC) grown on diamond and silicon substrates were obtained, which showed (i) N(sp3) variation from 0.3 to 0.6 depending on the DLC growth regime and (ii) inhomogeneous distribution of N(sp3) in depth of the samples.

A. Rylski

Papers

Application of Time-of-Flight Secondary Ion Mass Spectrometry to study diamond-like carbon films

Chemical analysis of interface area in DLC/Si systems

Analiza składu chemicznego układu DLC/Si przy użyciu metody SIMS i spektroskopii elektronów Augera