Electrodeposition of CuInS2 from aqueous solution (II) electrodeposition of CuInS2 film

Thin films of the semiconductor copper indium diselenide (CuInSe2) have been prepared at low temperature from a soluble precursor and incorporated into the first p-type thin-film transistors (TFTs) with spin-cast all-inorganic channels.

Solution-Processed Metal Chalcogenide Films for p-Type Transistors

We describe a universal precursor to compounds of the form Bi2Te3−xSex This precursor can be dispensed using traditional solution-processing techniques and then thermally decomposed into its respective parent compound Room temperature measurements of these materials yield thermoelectric figures of merit, ZT, ranging from 02 to 04

Universal and Solution-Processable Precursor to Bismuth Chalcogenide Thermoelectrics

Chemical deposition and characterization of copper indium disulphide thin films

We report the synthesis of pure phase (cubic as well as orthorhombic phase) nanoparticles of Cd2SnO4 (10–15 nm) by a one step solution combustion method and demonstrate their applicability for energy harvesting in photoelectrochemical devices The criticality of the process parameters in obtaining pure phase nanocrystals is emphasized through the study of the structural, optical and electronic properties Doctor bladed Cd2SnO4 films, when used as photoanodes for solar water splitting, show a maximum photocurrent of 80 μA cm−2 at 05 V for the orthorhombic phase and 250 μA cm−2 at 06 V for the cubic phase with respect to an Ag/AgCl reference electrode indicating the good promise of Cd2SnO4 for energy harvesting

Nanostructured Cd2SnO4 as an energy harvesting photoanode for solar water splitting

CuInSe2 for photovoltaics: a critical assessment

Cd2SnO4 powder has been synthesized through acrylamide sol-gel route for the first time. The gelation-calcination steps have been studied. Morphological examination of the network matrix and the calcined products has been done through SEM. XRD shows the orthorhombic structure of the Cd2SnO4 powder obtained. Arrhenius plots yield activation energies of 0·01 and 0·61 eV for the low and high slope regions, respectively. A semiconductor to metal transition is observed in the range 210–225°C.

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Cd2SnO4-its sol-gel preparation and materials properties

Properties of Cd2SnO4 conducting powder for ohmic contacts

Cadmium tin oxide powder has been synthesized by the sol-gel route using the polyacrylamide gel. Details of the preparation and preliminary characterization of the product are reported.

A. S. Lakshmanan

Papers

CuInSe2 for photovoltaics: a critical assessment

Cd2SnO4-its sol-gel preparation and materials properties

Properties of Cd2SnO4 conducting powder for ohmic contacts

Sol-gel synthesis of cadmium tin oxide powder

Studies on Cd2SnO4 thick layers prepared by the squeezing and sintering technique