We use the traveling wave model for simulating and analyzing nonlinear dynamics of complex semiconductor ring
laser devices. This modeling allows to consider temporal-spatial distributions of the counter-propagating slowly
varying optical fields and the carriers, what can be important when studying non-homogeneous ring cavities,
propagation of short pulses or fast switching. By performing numerical integration of the model equations we
observe several dynamic regimes as well as transitions between them. The computation of ring cavity modes
explains some peculiarities of these regimes.

Traveling wave modeling of semiconductor ring lasers

Effects of gain medium parameters on the sensitivity of semiconductor ring laser gyroscope

We analyze a rate equation model in the Langevin formulation for the two modes of the electric field and the
carrier density, modelling the spontaneous emission noise in a semiconductor ring laser biased in the bidirectional
regime. We analytically investigate the influence of complex backscattering coefficient when the two modes
are reinterpreted in terms of mode-intensity sum (I-Spectrum) and difference (D-spectrum). The D-spectrum
represents the energy exchange between the two counterpropagating modes and it is shaped by the noisy precursor
of a Hopf bifurcation influenced mainly by the conservative backscattering. The I-Spectrum reflects the energy
exchange between the total field and the medium and behaves similarly to the standard relative intensity noise
for single-mode semiconductor lasers. Good agreement between analytical approximation and numerical results
is found.

/pdf/noise-properties-of-semiconductor-ring-lasers-5beqkatlkr.pdf

Noise properties of semiconductor ring lasers

We use the traveling wave model for simulating and analyzing nonlinear dynamics of complex semiconductor ring laser devices. This modeling allows to consider temporal-spatial distributions of the counter-propagating slowly varying optical fields and the carriers, what can be important when studying non-homogeneous ring cavities, propagation of short pulses or fast switching. By performing numerical integration of the model equations we observe several dynamic regimes as well as transitions between them. The computation of ring cavity modes explains some peculiarities of these regimes.

Traveling wave modeling of dynamics in semiconductor ring lasers

We introduce a new technique for the measurement of inertial rotations using a semiconductor ring laser. Inertial rotation introduces a frequency deviation of the optical frequency of the two counterpropagating waves in the laser cavity, whereas mode coupling causes frequency attraction (frequency pushing) and finally locking at low rotation rates, washing out the small Sagnac frequency difference to be measured. Here we propose to measure inertial rotation whitin the so-called locking band using the phase/amplitude dependence on detuning found for the oscillating modes under the gain line. The dephasing accumulated by the two counterpropagating waves unbalances the fields' amplitudes within the locking region. We analytically derive the responsivity function quantifying the two-mode power unbalance versus rotation rate, by means of a two-mode rate equations model. Noise performance of a possible rotations sensor are also discussed by calculating the noise equivalent rotation rate.

/pdf/theoretical-analysis-of-a-new-technique-for-inertial-2mrw9z1otw.pdf

A. Scire

Papers

Theoretical Analysis of a New Technique for Inertial Rotation Sensing Using a Semiconductor Ring Laser