III–V semiconductors sputtering under argon neutral and ion projectiles with energies from 150 to 600 eV was investigated. It is shown that the dependency on energy of sputtering yield is well described by the Sigmund-Falcone and Haff-Switkowski models in Yudin's approximation. It analyses the relation of the surface binding, atomization and amorphization energies.

Sputtering of III–V semiconductors under argon atom and ion bombardment

Early stage in low energy ion-induced damage on InP(110) surface

In the present work CASWIN-D-code is described, which allows visually observe of the surface composition change. The code is more convenient for investigation of ion implantation processes due to the possibility for obtaining the visual results for their immediate analysis. The code is very simple in use and universal for wide range of multicomponent materials. We have performed the calculation of B/sub 4/C and GaAs implantation with He/sup +/, Ar/sup +/ and Ba/sup +/ ions by means of CASWIN-D-code. The correctness of program and adequacy of used calculation model is confirmed by comparison with experiment that shows the good agreement.

Computer simulation of ion implantation with visual observation of the implantation profiles

P lvv and lmm auger emission induced by ar+ impact on the inp(110) surface

An experimental investigation is made of the sputtering of gallium phosphide, arsenide, and antimonide by Ar + ions of 2-8 keV energy. A comparative analysis of the experimentally determined and calculated energy dependences of the sputtering coefficient is used in a determination of the reduced surface binding energies of these materials. The angular dependences of the sputtering coefficient obtained in the bombardment angle range θ < θ max are well described by the model proposed by Yamamura

A. Tybulewicz

Papers

Sputtering of gallium phosphide, arsenide, and antimoqnide by bombardment with 2-8 keV Ar+ ions