The lack of p-type lithium niobate limits it serving as a active material. Choosing suitable dopants or precise control of defects are effective methods to farbricate p-type materials. A series of molybdenum doped lithium niobate crystals and pure congruent lithium niobate crystals were grown under different polarization conditions. Their dominant carrier species were characterized by optical methods. The results showed dominant charge carrier species may be changed from electrons to holes when lithium niobate crystal was doped with molybdenum and polarized under the current of 70 mA for 30 min. The same polarization condition failed in changing the dominant carriers to holes in pure congruent lithium niobate crystals. The experimental results indicated that p-type lithium niobate crystal could be fabricated by molybdenum-doping and suitably controlling the polarization condition. Molybdenum doped lithium niobate crystals can be a promising candidate for active components.

Fabrication and formation mechanism of p-type lithium niobate crystals by molybdenum doping and polarization

Ti diffusion into LiNbO3 single crystal was studied as a result of Ruby laser irradiation of a metallic Ti thin film covering the crystal surface and subsequent thermal processing in a furnace. Different regimes of irradiation and heating were used. SIMS analysis was employed for investigation of the treatment. The combined method used proved to be able to form waveguides of 3–4 μm thickness.

Laser and thermal processing for Ti:LiNbO3 waveguide fabrication

A Q-switched ruby laser was applied for ohmic contacts formation to n-GaAs. A previously deposited composition of Au:Ge+Ni+Au was used as contact material. SIMS and V-A dependence measurements were carried out for contact characterization.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

A. V. Chankin

Papers

Laser and thermal processing for Ti:LiNbO3 waveguide fabrication

Ohmic contacts formation to GaAs by laser irradiation