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A. V. Gorbatyuk
Researcher at Russian Academy of Sciences
Publications - 21
Citations - 55
A. V. Gorbatyuk is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Thyristor & Bipolar junction transistor. The author has an hindex of 4, co-authored 21 publications receiving 55 citations. Previous affiliations of A. V. Gorbatyuk include Saint Petersburg State Polytechnic University.
Papers
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Journal ArticleDOI
On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range
Sergey O. Slipchenko,A. A. Podoskin,V. V. Vasil’eva,Nikita A. Pikhtin,A. V. Rozhkov,A. V. Gorbatyuk,V. V. Zolotarev,D. A. Veselov,A. V. Jabotinskii,A. A. Petukhov,I. S. Tarasov,T. A. Bagaev,M. V. Zverkov,V. P. Konyaev,Y. V. Kurniavko,M. A. Ladugin,A. V. Lobintsov,A. A. Marmalyuk,A. A. Padalitsa,V. A. Simakov +19 more
TL;DR: In this paper, a high power laser-thyristor structure providing low current-related and optical losses is developed, and the possibility of controlling the lasing turn-on delay time of the laser thyristor in the 8-2600 ns range is demonstrated.
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Theory and simulation of combined mechanisms limiting the safe operating area of power semiconductor microelectronic switches
TL;DR: In this paper, a generalized analytical model for the turnoff process of bipolar switches with microgates is developed taking into account the role of technological and design imperfections of real structures, which limit their safe operating area.
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Transient characteristics of reversely switched dynistors in the submicrosecond pulse range
A. V. Gorbatyuk,A. V. Gorbatyuk,Boris Ivanov,Boris Ivanov,I. E. Panaiotti,I. E. Panaiotti,F. B. Serkov,F. B. Serkov +7 more
TL;DR: In this article, the output current and voltage characteristics of reversely switched dynistors (RSDs) operating in a sub-microsecond pulse range have been numerically simulated and calculated.
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Comparative analysis of static characteristics of insulated gate bipolar transistors and thyristors with static induction
TL;DR: In this paper, a two-dimensional numerical simulation of equivalent silicon insulated gate bipolar transistors (IGBT) and static induction thyristors (SITh) with a trench structure in the conductive and blocking states was performed.
Journal ArticleDOI
Simulation modeling of submicrosecond operating conditions for high-voltage reversely switched dynistors
TL;DR: In this article, the authors investigated the mechanisms of switching submicrosecond current pulses using 2D computer simulation of physical processes in high-voltage reversely switched dynistors (RSDs) and found that these undesirable manifestations can be eliminated by appropriate reduction of the doping level of the p base.