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Abdul Basit

Researcher at Huazhong University of Science and Technology

Publications -  43
Citations -  437

Abdul Basit is an academic researcher from Huazhong University of Science and Technology. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 10, co-authored 36 publications receiving 276 citations.

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Enhanced thermoelectric performance of SnTe: High efficient cation - anion Co-doping, hierarchical microstructure and electro-acoustic decoupling

TL;DR: In this article, the effect of co-doping in both the anion and cation sites of SnTe has been investigated by adding BiCl3 and the effect on thermoelectric performance has been studied detailedly.
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Multi-cations compound Cu2CoSnS4: DFT calculating, band engineering and thermoelectric performance regulation

TL;DR: In this paper, a nano-sized CCTS sulfide has been facilely synthesized through mechanical alloying and then sintered via hot-pressing, and a peak ZT value about 0.8 at 800 K was achieved in the compound simply by Cu/Mn dual-doping due to the improved electrical properties by introducing metal-like second phase and the depressed lattice thermal conductivity by weakening of covalent bonding.
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In Situ Reaction Induced Core–Shell Structure to Ultralow κ lat and High Thermoelectric Performance of SnTe

TL;DR: This work provides a new strategy to regulate the TE performance of SnTe and also offers a new insight to other related thermoelectric materials.
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Tactfully decoupling interdependent electrical parameters via interstitial defects for SnTe thermoelectrics

TL;DR: In this article, an effective approach to decouple electrical parameters of electrical conductivity and Seebeck coefficient typified by introducing Vanadium interstitial defects, realizing an ultrahigh power factor and a reduction in lattice thermal conductivity has been presented in SnTe system.
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Combination of Carrier Concentration Regulation and High Band Degeneracy for Enhanced Thermoelectric Performance of Cu3SbSe4

TL;DR: This work offers an alternative approach to boost the TE properties of Cu3SbSe4 by selecting efficient dopant to weaken the coupling between electrical conductivity and Seebeck coefficient.