This work presents a novel barrier thin film based on an organic–inorganic nanolaminate, which consists of alternating nanolayers of self-assembled organic layers (SAOLs) and Al2O3. The SAOLs-Al2O3 nanolaminated films were deposited using a combination of molecular layer deposition and atomic layer deposition techniques at 80 °C. Modulation of the relative thickness ratio of the SAOLs and Al2O3 enabled control over the elastic modulus and stress in the films. Furthermore, the SAOLs-Al2O3 thin film achieved a high degree of mechanical flexibility, excellent transmittance (>95%), and an ultralow water-vapor transmission rate (2.99 × 10–7 g m–2 day–1), which represents one of the lowest permeability levels ever achieved by thin film encapsulation. On the basis of its outstanding barrier properties with high flexibility and transparency, the nanolaminated film was applied to a commercial OLEDs panel as a gas-diffusion barrier film. The results showed defect propagation could be significantly inhibited by inco...

Extremely High Barrier Performance of Organic-Inorganic Nanolaminated Thin Films for Organic Light-Emitting Diodes.

The outstanding advancement of perovskite solar cells (PSCs) in recent years makes them one of the currently most interesting topics in photovoltaic (PV) technology However, some instability issues must be solved for future application Encapsulation techniques have been an important solution to avoid or, at least, to limit those concerns for other PV technologies and are a promising way to circumvent extrinsic instability in the case of PSCs as well Here, we introduce a low temperature (60 °C) encapsulation process based on a single thin coating of Al2O3 prepared by atomic layer deposition (ALD-Al2O3) Our procedure is compatible with the individual PSC components, and hence a mean of 936% of the original peak power conversion efficiency (PCE) was retained after encapsulation, with the champion device exhibiting a PCE of 174% Moreover, the long term stability of the encapsulated devices was remarkably lengthened by preserving the fill factor and reducing the hysteresis usually observed in non-encapsulated samples The improvements due to the ALD-Al2O3 encapsulation process were achieved for a standard PSC configuration: methylammonium lead triiodide (MAPbI3), additivated-Spiro-OMeTAD and porous TiO2 and could rapidly be extrapolated to other, more stable PSC architectures, paving a route towards commercialization

Versatile perovskite solar cell encapsulation by low-temperature ALD-Al2O3 with long-term stability improvement

https://hal.archives-ouvertes.fr/hal-02012583/document

Speeding up the unique assets of atomic layer deposition

Organic light-emitting diodes (OLEDs) have aroused great attention due to the advantages of high luminescent efficiency, fast response time, wide viewing angle, and the compatibility with the flexible electronics. Nevertheless, the organic luminescent materials are vulnerable to environment moisture/oxygen. Thus, how to protect the OLEDs from the ambient moisture/oxygen erosion is of great importance to ensure the stability and reliability. Thin film encapsulation (TFE) via atomic layer deposition (ALD) has emerged as a potential method to meet the encapsulation requirements of OLEDs due to its unique assets. In this review, the challenges of TFE, including pinholes, crystallization, cracks, and overheated, are introduced first. The ALD-based monolayer, composite structures, and hybrid laminates were developed to improve the barrier property, flexibility, and thermal conductivity. Besides, the ALD reactors and processes for TFE are also reviewed. Finally, the challenges remained and future development in the stabilization of OLEDs via ALD are also discussed.

/pdf/thin-film-encapsulation-for-the-organic-light-emitting-4bflc92vo2.pdf

Thin film encapsulation for the organic light-emitting diodes display via atomic layer deposition

Design of ultrathin OLEDs having oxide-based transparent electrodes and encapsulation with sub-mm bending radius

Al2O3 [20 nm, atomic layer deposition (ALD)] and SiO films' [25 nm, physical vacuum deposition (PVD)] single barriers as well as hybrid barriers of the Al2O3/SiO or SiO/Al2O3 have been deposited onto single 100 nm thick tris-(8-hydroxyquinoline) aluminum (AlQ3) organic films made onto silicon wafers. The defects in the different barrier layers could be easily observed as nonfluorescent AlQ3 black spots, under ultraviolet light on the different systems stored into accelerated aging conditions (85 °C/85% RH, ∼2000 h). It has been observed that all devices containing an Al2O3 layer present a lag time τ from which defect densities of the different systems start to increase significantly. This is coherent with the supposed pinhole-free nature of fresh, ALD-deposited, Al2O3 films. For t > τ, the number of defect grows linearly with storage time. For devices with the single Al2O3 barrier layer, τ has been estimated to be 64 h. For t > τ, the defect occurrence rate has been calculated to be 0.268/cm2/h. Then, a t...

Defect analysis in low temperature atomic layer deposited Al2O3 and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

Agathe André

Papers

Defect analysis in low temperature atomic layer deposited Al2O3 and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers