A method of inspecting defects of a plurality of patterns that are formed on a substrate to have naturally the same shape. According to this method, in order to detect very small defects of the patterns with high sensitivity without being affected by irregular brightness due to the thickness difference between the patterns formed on a semiconductor wafer, a first pattern being inspected is detected to produce a first image of the first pattern, the first image is stored, a second pattern being inspected is detected to produce a second image of said second pattern, the stored first image and the second image are matched in brightness, and the brightness-matched first and second images are compared with each other so that the patterns can be inspected.

Defect inspection method and apparatus

Provided is a method for verifying a pattern of a semiconductor device. In the method, a designed layout of target patterns is provided, and transferring the designed layout on a wafer to form wafer patterns. Wafer patterns image contour is obtain. The image contour for wafer patterns on the designed layout are matched, After edge differences between the designed layout and the wafer patterns image contour are extracted, a checking layout for detecting wafer pattern defects is obtain by adding the edge differences on the designed layout. Defects on the checking layout is identified to verify the patterns in view of processes before fabrication of a photomask.

Method for verifying mask pattern of semiconductor device

Disclosed are apparatus and methods for finding lithographically significant defects on a reticle. In general, at least a pair of related intensity images of the reticle in question are obtained using an inspection apparatus. The intensity images are obtained such that each of the images experience different focus settings for the reticle so that there is a constant focus offset between the two focus values of the images. These images are then analyzed to obtain a transmission function of the reticle. This transmission function is then input into a model of the lithography system (e.g., a stepper, scanner, or other related photolithography system) to then produce an aerial image of the reticle pattern. The aerial image produced can then be input to a photoresist model to yield a “resist-modeled image” that corresponds to an image pattern to be printed onto the substrate using the reticle. This resist-modeled image can then be compared with a reference image to obtain defect information. In particular, due to the introduction of the lithography tool and photoresist model, this defect information pertains to lithographically significant defects.

Inspection methods and systems for lithographic masks

PROBLEM TO BE SOLVED: To appropriately correct a displacement or a distortion, or displacement and distortion between an optical image and a reference image by using characteristics of a pattern of an inspection object. SOLUTION: The image correcting apparatus includes an optical image acquisition unit 10 which acquires an optical image 100 of an inspection object, a reference image creation unit 20 which forms a reference image 200 from design data 210, an image correcting unit 205 which performs arithmetic processing of a correction model parameter 203 and the reference image 200 to correct the reference image and to form a corrected reference image 206, and a correction model parameter identifying unit 203 which uses feature data based on characteristics of the pattern of the inspection object image to calculate a correction model parameter 204 for correcting a displacement or a distortion or both of displacement and distortion between the optical image 100 and the reference image 200. COPYRIGHT: (C)2007,JPO&INPIT

Image correcting apparatus, pattern inspection apparatus, and image correcting method, and reticle

PROBLEM TO BE SOLVED: To provide a method for acquiring an optical image without inducing an out-of-focus state while improving a following property to a pattern. SOLUTION: A mask inspection device is equipped with: an average film thickness computing circuit 250 where pattern design feature data and film thickness information of the pattern are inputted, and an average film thickness in a prescribed area is computed on the basis of the design feature data of the pattern and the film thickness information of the pattern; and an optical image acquiring unit 150 that acquires an optical image by focusing to a position representing the average film thickness when an optical image in a region of the mask pattern corresponding to the prescribed region is acquired by using a mask pattern created on the basis of the design feature data of the pattern and the film thickness information of the pattern. COPYRIGHT: (C)2008,JPO&INPIT

Mask inspection device

A pattern test device has a reference data generator for generating reference pattern data and setting a first sub-area or a second sub-area in a mask area depending on the accuracy for the pattern test. A threshold selecting section selects first or second threshold depending on the test location residing in the first sub-area or second sub-area, whereby the judgement section judges presence or absence of a defect in the mask area while using the first or second threshold to compare therewith difference data between the test pattern data and the reference pattern data.

Pattern test device

A mask inspection system 10 inspects an inspection object pattern while comparing an inspection object data obtained in such a way as to image the inspection object pattern with a reference pattern data. The mask inspection system 10 is provided with an inspection information preparing part 12 producing inspection algorithm and inspection sensitivity to the reference pattern data based on wafer simulation, a converting part 13 generating a reference graphic data with inspection information while adding the inspection information to the reference graphic data, and a defect judging part 16 judges propriety of an inspection object pattern data while comparing reference graphic data with an inspection object data in every pixel based on the inspection information added to the reference graphic data with inspection information.

Method for inspecting mask

PROBLEM TO BE SOLVED: To provide a pattern inspection apparatus and a method for it which can finely set an area where a high accuracy inspection is required, suppress detection of untrue defects and rapidly inspect a pattern. SOLUTION: A plurality of mask patterns are superposed and the area where the high accuracy inspection is required can be easily and rapidly set as a fine selected area comprising a superimposed area and its vicinity. Or the detection of the untrue defects can be suppressed and the pattern can be rapidly inspected by setting the selected area to reference data by using a conversion part, reading a predetermined threshold corresponding to inspection accuracy of each area and determining and detecting the defects. COPYRIGHT: (C)2003,JPO

Pattern inspection apparatus and method for the same

PROBLEM TO BE SOLVED: To provide a mask inspection method for performing rapid pattern inspection by suppressing detection of a pseudo defect included in a mask pattern and reliably detecting a real defect. SOLUTION: In the mask inspection apparatus 10, an objective pattern for inspection is inspected by imaging the objective pattern and comparing the obtained objective data with reference pattern data. The mask inspection apparatus 10 is equipped with: an inspection information generating unit 12 to generate inspection information including inspection algorithm and inspection sensitivity in the reference pattern data based on wafer simulation; a converting unit 13 to add the inspection information to reference figure data to generate reference figure data with inspection information; and a defect decision unit 16 to compare the reference figure data with the objective pattern data in each pixel based on the inspection information added to the reference figure data with inspection information so as to decide whether the object pattern is acceptable or not. COPYRIGHT: (C)2005,JPO&NCIPI

Akihiko Ando

Papers

Pattern test device

Method for inspecting mask

Pattern inspection apparatus and method for the same

Mask inspection method