The electron cooling technique for shrinking ion beams of extremely high phase-space density was proposed and first tested at the Nuclear Physics Institute of the Siberian Branch of the Russian Academy of Sciences. The present review traces the history of the development of the idea from its first emergence in 1965 and the discussion originated in G I Budker's talk at the symposium on electron–positron rings in Sacle in September 1966 — through 35 years of research — down to the present time, with numerous applications in many acceleration centers around the world.

https://iopscience.iop.org/article/10.1070/PU2000v043n05ABEH000741/pdf

Electron cooling: 35 years of development

An apparatus and method for recording an image on the surface of a 3D object (2) uses a laser projector (1) that scans a light beam over the surface in an image pattern The projector operates in a template imaging mode and an image recording mode where the beam scans at a speed that in a single pass/scan mode is typically four to five orders of magnitude slower than in the template imaging mode A layer of a photosensitive material (25) is applied to the surface (9) of the object either partially or fully Projection in the template imaging mode can guide the applying The layer is substantially insensitive to ambient light for at least a period of time necessary to perform a desired processing step on the object The layer has a maximum spectral sensitivity in the vicinity of the wavelength of the laser light beam In one or multiple passes of the beam over the image pattern operating in the image record mode, the accumulated light energy dose density is sufficient to react the material and record the image

3d projection with image recording

A gate driving circuit according to the present invention having, an output circuit which is connected to a first power supply terminal and a ground terminal and, upon receiving an ON/OFF signal, changes a level of a gate output terminal between a power supply voltage and a ground voltage, a shunt switching element which is connected between the gate output terminal and the ground terminal and is ON/OFF-controlled upon receiving a shunt control signal, and an output shunt control circuit which monitors the level of the gate output terminal and outputs the shunt control signal, wherein when the level of the gate output terminal decreases to not more than a first threshold value, the output shunt control circuit turns on the shunt switching element, and while the level is not more than a second threshold value larger than the first threshold value, the output shunt control circuit supplies the shunt control signal to said shunt switching element to maintain an ON state of the shunt switching element.

Gate driving circuit and semiconductor device

A castable, moldable, and/or extrudable structure using a metallic primary alloy. One or more additives are added to the metallic primary alloy so that in situ galvanically-active reinforcement particles are formed in the melt or on cooling from the melt. The composite contain an optimal composition and morphology to achieve a specific galvanic corrosion rate in the entire composite. The in situ formed galvanically-active particles can be used to enhance mechanical properties of the composite, such as ductility and/or tensile strength. The final casting can also be enhanced by heat treatment, as well as deformation processing such as extrusion, forging, or rolling, to further improve the strength of the final composite over the as-cast material.

Galvanically-Active In Situ Formed Particles for Controlled Rate Dissolving Tools

A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side.

Method for producing vapor deposition mask, and method for producing organic semiconductor element

A power IC having at least a level shifter for changing the level of an input signal, a high-side driver circuit for driving a predetermined load in accordance with a level changed by the level shifter, the high-side driver circuit being in a floating state, and a reverse current preventing diode for disconnecting a current path from the ground of the level shifter to the reference potential of the high-side driver circuit. The high-side driver circuit and reverse current preventing diode are respectively dielectrically isolated by a dielectric member to prevent insufficient element isolation to be caused by bias conditions. The predetermined reference potential to be connected to an inductive load or the like in the high-side driver circuit can be set to a negative potential. The electrical energy stored in the inductive load or the like can be extracted out and attenuated at high speed via the reference potential set to the negative potential to thereby realize a high speed operation.

Dielectrically isolated power IC

A copper film layer and a resin film are sequentially layered on a skin material, the resin film is irradiated with a laser beam so as to be removed, a mask is formed on the copper film layer by use of the residual of the resin film, thereafter, an etching process is provided thereto, so that a copper film layer pattern is formed on the reflective surface of the skin material

Method of manufacturing a reflector

The gate driver includes a high-side gate driver circuit (201) for driving a high-side switching element (6) in response to a high-side input signal (HS) and a low-side gate driver circuit (202) for driving a low-side switching element (8) in response to a low-side input signal (LS), to control the switching elements connected in a push-pull structure. There are respective edge detection circuits (1', 19) for detecting the edges of the input signals (LS, HS) and driving the respective switching elements. An ON pulse generation circuit generates an ON pulse (Pon) in response to the leading or trailing edge of the HS edge detection circuit control input signal, which is detected by a first edge detection circuit. An OFF pulse generation circuit generates an OFF pulse (Poff1) based on detection outputs of the edge detection circuits. A latch circuit (4') is supplied with the ON and OFF pulses, for holding ON/OFF information of the HS switching element. A drive circuit (5) outputs a HS gate signal for controlling the HS switching element in accordance with the ON/OFF information. When driving the LS switching element is instructed by the LS input signal, the OFF pulse is generated by the OFF pulse generation circuit (3) to forcedly turn off the HS switching element.

Gate driver for driving a switching element, and a power converter in which the gate driver and an output element are integrated in one-chip

As a part of new experimental facility in the Radio Isotope Beam Factory (RIBF) project at RIKEN, the Multi-Use Experimental Storage rings (MUSES) have an Accumulator Cooler Ring (ACR) which is used for both the accumulation and cooling of RI beams and various experiments. Besides a stochastic cooler, an electron cooler (EC) is presently under development. The ion energy in the ACR ranges from 60 to 400 MeV/u which corresponds to the electron beam (e-beam) energy for the EC from 30 to 250 kV. The maximum current from a 12.7 mm cathode is 4.1 A with a gun perveance of 0.79 μP. A superconducting solenoid in the gun section generates a magnetic field of 4 T which corresponds to a factor of 20 in adiabatic expansion. The design issues of the gun section, collector, toroidal magnets and compensation solenoids are discussed in detail with some retrospection of the development.

Akira Yamashita

Papers

Dielectrically isolated power IC

Method of manufacturing a reflector

Gate driver for driving a switching element, and a power converter in which the gate driver and an output element are integrated in one-chip

Design of an electron cooling device for the accumulator cooler ring in MUSES project