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Alex H. Weiss
Researcher at University of Texas at Arlington
Publications - 153
Citations - 1846
Alex H. Weiss is an academic researcher from University of Texas at Arlington. The author has contributed to research in topics: Positron & Auger electron spectroscopy. The author has an hindex of 20, co-authored 152 publications receiving 1771 citations. Previous affiliations of Alex H. Weiss include Harvard University & Brandeis University.
Papers
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Journal ArticleDOI
Experimental Determination of Positron Related Surface Characteristics of 6H-SiC
TL;DR: The positron work function of 6H-SiC was determined to be −2.1±0.1 ǫ from an analysis of the energy spectrum of positrons reemitted from the surface.
Journal ArticleDOI
The effect of adsorbed atomic hydrogen on the growth of ultrathin silicon films on Ge(100) studied by positron-annihilation-induced Auger electron spectroscopy (PAES)
J.H. Kim,Alex H. Weiss +1 more
TL;DR: In this article, the effects of adsorbed atomic hydrogen on the stability of silicon films grown on a Ge(100) substrate were studied by using positron-annihilation-induced Auger electron spectroscopy (PAES) and electron-induced Auger-based EM spectrograms (EAES).
Proceedings ArticleDOI
Positronium formation in graphene and graphite.
Varghese Anto Chirayath,A. J. Fairchild,R. W. Gladen,M. D. Chrysler,A. R. Koymen,Alex H. Weiss +5 more
TL;DR: In this paper, the authors investigated the role of the incident positron kinetic energy (1.5eV to 1keV) in positronium formation on the surface of clean polycrystalline copper (Cu), highly oriented pyrolytic graphite (HOPG) and multi-layer graphene (MLG) grown on a polycrystaline copper substrate.
Journal ArticleDOI
The Study of Secondary Electrons and Redistributed Primaries (Electrons and Positrons) from Ge(100) Surface Utilizing the Electron and the Positron Beams
Journal ArticleDOI
Studies of the Auger spectrum from the (100) surface of GaAs using positron annihilation induced Auger electron spectroscopy
TL;DR: In this paper, the first high-resolution positron annihilation induced Auger spectrum from GaAs(100) is presented, which displays six As and three Ga Auger peaks below 110 eV.