[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Get the phase diagram information you need at a price you can afford. Key Features: Peer reviewed by the Japanese Committee for Alloy Phase Diagrams. Updated through April 2000. Total number of diagrams = 2,332 (605 are new of greatly revised diagrams; among these 171 are not in Binary Alloy Phase Diagrams, 2nd Edition). Approximately 600 crystal structure tables of systems for which phase diagrams are unknown. You've been asking for a simple book containing just binary phase diagrams and crystal structure data. Desk Handbook: Phase Diagrams for Binary Alloys meets this need, and it presents the most current information. Updates the previous print compilation of binary phase diagrams by 10 years. Presents diagrams in consistent size. Shows the principal axis in atomic per cent, with a secondary axis in weight per cent. Includes an introductory article on phase diagrams and their use. Gives reference to the original literature source. This volume is the latest outgrowth of the phase diagram activity in which ASM International has been involved since 1978.

Desk handbook phase diagrams for binary alloys

Titanium electrodes that have been passivated by forming an anodic oxide film in acid solution are known to undergo a spontaneous passive-active transition at open circuit after a delay period that depends on the experimental conditions In the present work, the reactivation of the electrode has been investigated, and it has been shown that it arim as the result of uniform chemical dissolution of the oxide film The rate of dissolution, and hence the stability of the oxide, was found to depend on the rate at which the oxide film had been formed as well as on solution composition and temperature The rate of film dissolution in sulphuric acid showed a first order dependence on proton concentration, but high dissolution rates were also measured in alkaline solution (pH 14) The activation energy for film dissolution in 30 mol dm-' H,SOI was found to be 63 kJ mol-' The reduction of the film under galvanostatic conditions was also investigated, and it was established that simultaneous chemical and electrochemical dis8ohItion occurred uniformly across the electrode surface

Stability and open circuit breakdown passive oxide film on titanium of the

One-dimensional semiconductor nanostructures have been studied in great depth over the past number of decades as potential building blocks in electronic, thermoelectric, optoelectronic, photovoltaic and battery devices. Silicon has been the material of choice in several industries, in particular the semiconductor industry, for the last few decades due to its stable oxide and well documented properties. Recently however, Ge has been proposed as a candidate to replace Si in microelectronic devices due to its high charge carrier mobilities. A number of various ‘bottom-up’ synthetic methodologies have been employed to grow Ge nanowires, including chemical vapour deposition, thermal evaporation, template methods, supercritical fluid synthesis, molecular beam epitaxy and solution phase synthesis. These bottom-up methods afford the opportunity to produce commercial scale quantities of nanowires with controllable lengths, diameters and crystal structure. An understanding of the vapour–liquid–solid (VLS) and vapour–solid–solid (VSS) mechanism by which most Ge nanowires are produced, is key to controlling their growth rate, aspect ratio and morphology. This article highlights the various bottom-up growth methods that have been used to synthesise Ge nanowires over the past 5–6 years, with particular emphasis on the Au/Ge eutectic system and the VLS mechanism. Thermodynamic and kinetic models used to describe Ge nanowire growth and morphology control will also be discussed in detail.

Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control

A coherent set of model equations for various surface and interface energies in systems with liquid and solid metals and alloys.

Melting process and the size depression of the eutectic temperature in Ag/Ge and Ge/Ag/Ge layered films

Critical thickness of contact melting in the Au/Ge layered film system

Interfacial kinetics in nanosized Au/Ge films: An in situ TEM study

The results of studying the effect of the characteristic size on the rate of diffusion processes in nanometer Cu-Ni film systems have been reported. The film system has been prepared by sequential vacuum deposition of the components, and the activation energy of diffusion has been determined from a change in the electrical resistance of the film system in a heating-cooling cycle. It has been shown that the activation energy of grain-boundary diffusion decreases with decreasing characteristic size of the system and amounts to 0.25 eV for the film system with a characteristic size of 5 nm, which corresponds to an increase in the grain-boundary diffusion coefficient by 10 orders of magnitude with respect to massive samples.

Size dependence of the activation energy of diffusion in multilayer Cu-Ni films

The kinetics of homogenization of an Ag–Pd film system with a total thickness of 120 nm and a grain size of 5–10 nm has been studied by means of in situ TEM heating. The film system has been formed by the sequential deposition of components in a vacuum on the substrate at room temperature. It has been shown that diffusion processes are activated, starting from the temperature 453 K, resulting in complete homogenization of the film system at 573 K with preservation of its fine-grained structure. The effective diffusion coefficient in the Ag–Pd system was measured as 10−17–10−18 m2/s at 553 K. A possible mechanism of homogenization is discussed.

Alexey Minenkov

Papers

Melting process and the size depression of the eutectic temperature in Ag/Ge and Ge/Ag/Ge layered films

Critical thickness of contact melting in the Au/Ge layered film system

Interfacial kinetics in nanosized Au/Ge films: An in situ TEM study

Size dependence of the activation energy of diffusion in multilayer Cu-Ni films

The kinetics of the formation of a solid solution in an Ag–Pd polycrystalline film system