Showing papers by "Amandine Bellec published in 2013"
TL;DR: In this paper, a single silicon dangling bond of a hydrogenated $p$-type doped Si(100) surface has two stable charge states (neutral and negatively charged) at low temperature (5 K).
Abstract: The ultimate miniaturization of electronic devices at the atomic scale with single electrons requires controlling the reversible charge storage in a single atom. However, reversible charge storage is difficult to control as usually only one charge state can be stabilized. Here, combining scanning tunneling microscopy (STM) and density functional theory (DFT), we demonstrate that a single silicon dangling bond of a hydrogenated $p$-type doped Si(100) surface has two stable charge states (neutral and negatively charged) at low temperature (5 K). Reversible charge storage is achieved using a gate electric field between the STM tip and the surface.
31 citations