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Ana M. Herrera
Researcher at Benemérita Universidad Autónoma de Puebla
Publications - 11
Citations - 54
Ana M. Herrera is an academic researcher from Benemérita Universidad Autónoma de Puebla. The author has contributed to research in topics: Photoluminescence & Raman spectroscopy. The author has an hindex of 4, co-authored 11 publications receiving 42 citations.
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New o- and p-methacryloylaminophenylarsonic monomers. Useful building units for water-soluble polymeric and nonlinear optical materials
TL;DR: In this article, a new o- and p-methacryloylaminophenylarsonic acid (MAPHA) monomers and their sodium salts were prepared from the condensation reaction of o-, p-aminophenylaronic acids and methacrylyloyl chloride for obtaining water-soluble cationic exchange polymeric materials by radical polymerization of such monomers.
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X-ray crystal structure of 2-styrylpyridine
M. Judith Percino,Víctor M. Chapela,Manuel Salmón,Georgina Espinosa-Pérez,Ana M. Herrera,Américo Flores +5 more
TL;DR: In this article, the 2-styrylpyridine has been crystallized from the condensation reaction between 2-methylpyridine with benzaldehyde in the formation of the model compound.
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A Brief Review of Growth Techniques for Obtaining of III-V Semiconductor Compounds
Erick Gastellóu,Godofredo García,Ana M. Herrera,Crisoforo Morales,Rafael García,Gustavo A. Hirata,Mario Robles,Jorge Alberto Rodríguez,Iván García +8 more
TL;DR: In this article, a brief review of four growth techniques for the obtaining of III-V semiconductors compounds is presented, such as metalorganic chemical vapor deposition, hot filament chemical vapor, liquid phase epitaxy, and molecular beam epitaxy.
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P-type GaN powders obtained by nitridation of Ga-Mg liquid metallic solution
Erick Gastellóu,Crisoforo Morales,Rafael García,Godofredo García,Gustavo A. Hirata,Ana M. Herrera,R. Galeazzi,Enrique Rosendo,Tomás Díaz,E. M. Tejeda +9 more
TL;DR: Magnesium doped GaN powders were obtained by nitridation of a Ga-Mg liquid metallic solution in a chemical vapor deposition system during two hours at 1000 °C.
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Enhanced crystalline size of undoped GaN powders obtained by nitridation of metallic gallium
Erick Gastellóu,Crisoforo Morales,Rafael García,Godofredo García,Gustavo A. Hirata,R. Galeazzi,Ana M. Herrera,Enrique Rosendo,Tomás Díaz,Juan R. Ramos,Román Romano,A. Coyopol +11 more
TL;DR: In this paper, the photoluminescence spectrum for the nitridation technique of metallic gallium at room temperature was shown, showing how the point defects generated during the preparation of GaN powders allow the adequate incorporation of nitrogen and favor the crystal growth.