A
Anand Chandrashekar
Researcher at Lam Research
Publications - 29
Citations - 1429
Anand Chandrashekar is an academic researcher from Lam Research. The author has contributed to research in topics: Tungsten & Layer (electronics). The author has an hindex of 16, co-authored 29 publications receiving 1428 citations.
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Patent
Depositing tungsten into high aspect ratio features
TL;DR: In this article, a method for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner is described, where the remaining layer is more passivated near the feature opening than inside the feature.
Patent
Tungsten feature fill
TL;DR: In this paper, the methods of filling features with tungsten and related systems and apparatus are described, including inside-out fill techniques as well as conformal deposition in features.
Patent
Methods for depositing tungsten films having low resistivity for gapfill applications
TL;DR: In this article, various methods of filling gaps or recessed features on substrates are provided, which involve bulk deposition of tungsten to partially fill the feature followed by a removing a top portion of the deposited tengsten.
Patent
Systems and methods for controlling etch selectivity of various materials
TL;DR: A method for filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD) is described in this paper.
Patent
Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
TL;DR: In this article, the authors present a method for filling a 3D structure of a semiconductor substrate with tungsten-containing material. Butts et al. present a controller with instructions for etching vertically and horizontally in order to fill the interior regions left unfilled by the first layer.