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Annan Shang

Researcher at Pennsylvania State University

Publications -  19
Citations -  105

Annan Shang is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Tantalate & Electric field. The author has an hindex of 4, co-authored 13 publications receiving 51 citations.

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Enhanced electro-optic beam deflection of relaxor ferroelectric KTN crystals by electric-field-induced high permittivity

TL;DR: A dramatically increased EO beam deflection in relaxor ferroelectric potassium tantalate niobate (KTN) crystals is reported by using the electric-field-enhanced permittivity to offer a wider deflection range and a lower driving voltage.
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Study of thermal and spatial dependent electric field-induced phase transition in relaxor ferroelectric crystals using Raman spectroscopy

TL;DR: In this paper, the electric field-induced phase transition in perovskite relaxor ferroelectric crystals has been studied using Raman spectroscopy, and it was shown that the intensity of the Raman spectrum of electric field induced phase transition is a function of temperature and thermal history.
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Anomalous bi-directional scanning electro-optic KTN devices with UV-assisted electron and hole injections

TL;DR: Anomalous electro-optic potassium tantalate niobate (KTN) devices are reported, in which both electrons and holes were injected into the KTN crystal via ultraviolet (UV) illumination-assisted charge injection, to enable the new bi-directional scanning capability.
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Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch.

TL;DR: An ultralong lock-on time on the order of millisecond is achieved, which is 3 orders of magnitude longer than a typical lock- on time of high-gain GaAs PCSS, consisting of a semi-insulating gallium arsenic (GaAs) substrate and a front-bonded ruby crystal.
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Ultrahigh light extraction efficiency light emitting diodes by harnessing asymmetric obtuse angle microstructured surfaces

TL;DR: In this article, an ultrahigh light extraction efficiency (LEE) light emitting diodes (LEDs) by incorporating innovative asymmetric obtuse angle microstructured surfaces was reported.