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Annan Shang
Researcher at Pennsylvania State University
Publications - 19
Citations - 105
Annan Shang is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Tantalate & Electric field. The author has an hindex of 4, co-authored 13 publications receiving 51 citations.
Papers
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Journal ArticleDOI
Enhanced electro-optic beam deflection of relaxor ferroelectric KTN crystals by electric-field-induced high permittivity
Chang Jiang Chen,Ju Hung Chao,Yun Goo Lee,Annan Shang,Ruijia Liu,Shizhuo Yin,Robert C. Hoffman +6 more
TL;DR: A dramatically increased EO beam deflection in relaxor ferroelectric potassium tantalate niobate (KTN) crystals is reported by using the electric-field-enhanced permittivity to offer a wider deflection range and a lower driving voltage.
Journal ArticleDOI
Study of thermal and spatial dependent electric field-induced phase transition in relaxor ferroelectric crystals using Raman spectroscopy
Chang Jiang Chen,Wenbin Zhu,Ju Hung Chao,Annan Shang,Yun Goo Lee,Ruijia Liu,Stuart Yin,Mark Dubinskii,Robert C. Hoffman +8 more
TL;DR: In this paper, the electric field-induced phase transition in perovskite relaxor ferroelectric crystals has been studied using Raman spectroscopy, and it was shown that the intensity of the Raman spectrum of electric field induced phase transition is a function of temperature and thermal history.
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Anomalous bi-directional scanning electro-optic KTN devices with UV-assisted electron and hole injections
Chang Jiang Chen,Annan Shang,Yun Goo Lee,Ju Hung Chao,Ruijia Liu,Shizhuo Yin,Robert C. Hoffman +6 more
TL;DR: Anomalous electro-optic potassium tantalate niobate (KTN) devices are reported, in which both electrons and holes were injected into the KTN crystal via ultraviolet (UV) illumination-assisted charge injection, to enable the new bi-directional scanning capability.
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Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch.
Ju Hung Chao,Wenbin Zhu,Chang Jiang Chen,Yun Goo Lee,Annan Shang,Shizhuo Yin,Robert C. Hoffman +6 more
TL;DR: An ultralong lock-on time on the order of millisecond is achieved, which is 3 orders of magnitude longer than a typical lock- on time of high-gain GaAs PCSS, consisting of a semi-insulating gallium arsenic (GaAs) substrate and a front-bonded ruby crystal.
Journal ArticleDOI
Ultrahigh light extraction efficiency light emitting diodes by harnessing asymmetric obtuse angle microstructured surfaces
TL;DR: In this article, an ultrahigh light extraction efficiency (LEE) light emitting diodes (LEDs) by incorporating innovative asymmetric obtuse angle microstructured surfaces was reported.