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Antonio Redondo
Researcher at California Institute of Technology
Publications - 21
Citations - 607
Antonio Redondo is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Desorption & Generalized valence bond. The author has an hindex of 13, co-authored 21 publications receiving 600 citations.
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Electronic correlation and the Si(100) surface: Buckling versus nonbuckling
TL;DR: In this paper, the authors show that the use of doubly occupied orbital wavefunctions, such as the closed shell Hartree-Fock (HF), leads to an asymmetric dimer description of the Si(100) surface.
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Oxidation of silicon surfaces
TL;DR: In this article, the authors carried out theoretical studies for chemisorbed O atom and O2 molecule on Si(111) surfaces using clusters of atoms to model the surface.
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Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation
TL;DR: Using ab initio quantum chemical methods (generalized valence bond), the authors examined the electronic states of Si (111) and GaAs (110) surface, and the relaxation of the Si(111) surface.
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The peroxy radical model for the chemisorption of O2 onto silicon surfaces
TL;DR: In this paper, it was shown that an oxygen molecule chemisorbed onto the silicon surface has an electronic structure corresponding to a peroxy radical and carried out extensive theoretical calculations including electron correlation and ionization potentials.
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