An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

Thin-film transistor

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

Method of Manufacturing a Semiconductor Device

A method for direct printing of micro-optical components (82) onto optical substrates (84) or active devices to create optical circuit elements as well as micro-optical components and systems, such as plano-convex circular, cylindrical or square lenslets, anamorphic lenslets, waveguides, couplers, mixers and switches and monolithic lenses deposited directly onto optical components such as diode lasers and optical fibers. The method provides a means for precisely depositing a wide range of materials in a wide variety of shapes for fabricating a full range of passive and active micro-optic devices.

Method for producing micro-optical components

This invention relates to a method for preparing a lens or a lens array and apparatus for carrying out the method. The method comprises directing, in line of sight in a vacuum, the vapor of a substance, which is solid and transparent at ambient temperature, from a source of that vapor through a hole in a mask to form a deposit on a substrate. The mask is so positioned between the vapor source and the substrate that obscuration by the solid portions of the mask around the hole causes the deposit to assume a curved surface and function as a lens.

Lenses and lens arrays

An improved method for crystallizing amorphous or polycrystalline material is disclosed, which method employs a novel intermediate product. A film of material to be crystallized is formed on a substrate. A porous silica cap is formed over the film. The resultant intermediate product is heated to melt the film which crystallizes upon cooling. Gases generated during melting of the film escape through the porous cap which also functions to prevent deleterious agglomeration of the material while it is in a molten state.

Capping layer for recrystallization process

A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having formed thereon a duplex electrically conductive film comprising a non-tantalum electrically conductive film electrode covered by a thin tantalum film is disposed within an oxygen-inert gas containing vacuum environment, said non-tantalum film being disposed intermediate said substrate and said tantalum film. A film of tantalum oxide is applied over the conductive film by r-f sputtering of a tantalum oxide target within the oxygen-inert gas containing vacuum environment while the dielectric substrate and conductive film are being cooled. The composite may then be removed from said oxygen-inert gas containing environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.

Method of forming a thin film capacitor

An optical information storage medium comprising a thin, optically darkenable film containing silver, lead, chlorine and oxygen, produced by vapor-depositing AgCl and PbO in specified proportions on a substrate for the film, is described.

Arthur J. Whitman

Papers

Lenses and lens arrays

Capping layer for recrystallization process

Method of forming a thin film capacitor

Archival optical recording medium

Method and apparatus crystallization of semiconductor material