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Arthur Y. Chen
Researcher at Applied Materials
Publications - 7
Citations - 648
Arthur Y. Chen is an academic researcher from Applied Materials. The author has contributed to research in topics: Isotropic etching & Etching (microfabrication). The author has an hindex of 6, co-authored 7 publications receiving 646 citations.
Papers
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Patent
Self-cleaning etch process
Xue-Yu Qian,Zhi-Wen Sun,Weinan Jiang,Arthur Y. Chen,Gerald Zheyao Yin,Ming-Hsun Yang,Ming-Hsun Kuo,David Mui,Jeffrey D. Chinn,Shaoher X. Pan,Xikun Wang +10 more
TL;DR: In this paper, a process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, nonhomogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etch chamber 30 is presented.
Patent
Treatment of etching chambers using activated cleaning gas
Gerald Zheyao Yin,Xue-Yu Qian,Patrick Leahey,Jonathan D. Mohn,Waiching Chow,Arthur Y. Chen,Zhi-Wen Sun,Brian K. Hatcher +7 more
TL;DR: In this paper, a method for cleaning etch residue that is chemically adhered to ceramic surfaces in the etching chamber is presented. But the method is not suitable for cleaning surfaces that are chemically attached to the walls of the etch chamber, such as aluminum nitride, boron carbide, diamond, silicon oxide, silicon carbide and titanium carbide.
Patent
Plasma assisted processing chamber with separate control of species density
Gerald Zheyao Yin,Arnold Kolandenko,Hong Ching Shan,Peter K. Loewenhardt,Chii Lee,Yan Ye,Xueyan Qian,Songlin Xu,Arthur Y. Chen,Arthur H. Sato,Michael N. Grimbergen,Diana Ma,John M. Yamartino,Chun Yan,Wade Zawalski +14 more
TL;DR: In this paper, an apparatus and method for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma, is described. But it does not specify how to control the densities of the particle species within the processing chamber.
Patent
Multiple stage process for cleaning process chambers
TL;DR: In this article, a process gas comprising different compositions of etchant gas is used to etch layers on the substrate 25 thereby depositing a compositionally variant etchant residue inside the chamber 30.
Patent
Method for cleaning an etching chamber
Gerald Zheyao Yin,Xue-Yu Qian,Patrick Leahey,Jonathan D. Mohn,Waiching Chow,Arthur Y. Chen,Zhi-Wen Sun,Brian K. Hatcher +7 more
TL;DR: In this paper, a short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber to clean the etch residue on the walls and components of the chamber, which is particularly useful for cleaning residue that is chemically adhered to ceramic surfaces in the chamber.