An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A method for packaging a bare semiconductor die using a one piece package body with a pattern of external conductors is provided. The package body includes a die mounting location and an interconnect opening that aligns with the bond pads on the die. Electrical interconnects, such as wire bonds, are formed through the interconnect opening to establish electrical communication between the bond pads on the die and the conductors on the package body. The conductors on the package body can include solder bumps to permit the package to be flip chip mounted to a supporting substrate such as a printed circuit board or to be mounted in a chip-on-board configuration. The package can be fabricated by bulk micro-machining silicon wafers to form the package bodies, attaching the dice to the package bodies, and then singulating the wafer. Alternately the package body can be formed of a FR-4 material. In addition, multiple dice can be attached to a package body to form a multi-chip module.

Single piece package for semiconductor die

A semiconductor optical radiation package (200) includes a leadframe (201), at least one semiconductor optical radiation emitter (202) and an encapsulant (203). The leadframe (201) has a heat extraction member (204), which supports the semiconductor optical radiation emitter (202) and provides one or more thermal paths for removing heat generated within the emitter (202) to the ambient environment, as well as at least two electrical leads (205) for providing electrical coupling to the semiconductor optical radiation emitter (202). The encapsulant (203) covers and protects the emitter (202) and optional wire bonds (211) from damage and allows radiation to be emitted from the emitter into the ambient environment. The semiconductor optical radiation package (200) provides high emitted flux and is preferably compatible with automated processing techniques.

Semiconductor radiation emitter package

Leadless plastic chip carriers are formed from a matrix of lead frames provided in a section of a metal strip. Each lead frame in the matrix includes a die-attach pad and multiple leads disposed in close proximity to the die-attach pad. After a semiconductor die is attached to each of the die-attach pad and wire-bonded, the leadless plastic chip carriers are formed by providing a plastic encapsulation which exposes the bottom sides of the die-attach pad and the leads. The bottom sides of the leads serve as solder pads to be used for attaching the leadless plastic chip carrier to a printed circuit board.

Saw-singulated leadless plastic chip carrier

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

An electronic package (10) having improved thermal performance. In the case of a plastic (30) package, the inner ends (20) of the leads (18) of the lead frame are attached to a heat slug (12) by a high thermal conductivity material (32) such as solder or a polymeric material. In the case of a metal package, the inner ends of the leads of the lead frame are attached to the metal base component by a high thermal conductivity material.

Electronic package with improved thermal properties

There is provided a metallic component for an electronic package. The component is coated with an electrically non-conductive layer and has a plurality of conductive circuit traces are formed on a surface. The circuit traces are soldered directly to the input/output pads of an integrated circuit device and to a second plurality of circuit traces. The component may include a heat sink to enhance dissipation of heat from an encapsulated integrated circuit device.

Components for housing an integrated circuit device

There is provided an anodizable aluminum substrate having an increased breakdown voltage. The increase in breakdown voltage is achieved by selecting an appropriate aluminum alloy and appropriate processing parameters. Sealing the anodic film increases the breakdown voltage by decreasing corrosion. A preferred sealant is an epoxy cresol novolac having a low room temperature viscosity that cures to a highly cross-linked polymer.

Anodized aluminum substrate having increased breakdown voltage

The present invention relates to a system and a process for producing improved quality electrodeposited and/or treated metal or metal alloy foil to be used in electrical and electronic applications. The quality of the foil being produced and/or treated by the system is improved by providing each treatment tank in the system with a dual filtration system. The dual filtration system for each tank comprises a filter conditioning loop for substantially continuously withdrawing solution from the tank and removing particulate matter from the withdrawn solution and a system for removing surface impurities from the solution. In a first embodiment, the surface impurities removing system comprises an off-line solution filtration and replenishment system. In a second embodiment, the surface impurities removing system comprises a skimmer floating on the surface of the solution. The present invention has particular utility in systems for producing electrodeposited and/or treated copper foils.

Systems for producing electroplated and/or treated metal foil

A multi-metal layer interconnect tape is provided. The tape is not supported by a dielectric carrier. A thin dielectric adhesive layer separates at least two self supporting metal foil layers. In one embodiment of the invention, conductive vias electrically interconnect leads formed in a first metal foil layer with ground and power circuits formed in a second metal foil layer. The metal foil layers are in close proximity so the vias have a low aspect ratio. The vias may be readily coated with continuous film of a conductive metal and are much easier to clean than conventional vias having significantly higher aspect ratios.

Arvind Parthasarathi

Papers

Electronic package with improved thermal properties

Components for housing an integrated circuit device

Anodized aluminum substrate having increased breakdown voltage

Systems for producing electroplated and/or treated metal foil

Multi-metal layer interconnect tape for tape automated bonding