Atsushi Hayashi

TL;DR: In this paper, a sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, was presented.

TL;DR: In this article, a ceramics rotatable magnetron sputtering cathode target is formed on the outer surface of the target holder, where at least one layer selected from the group consisting of a layer of a metal or alloy having a thermal expansion coefficient of an intermediate level between the thermal expansion coefficients of the Ceramics layer and the holder, and a layer with a temperature coefficient approximating to the Thermal Expansion Coefficient (TEC) of the COC of the layer, is formed as an undercoat.

TL;DR: In this paper, a new sputter technique for high rate deposition of TiO2 was developed for applying to conventional planar magnetron DC sputter system, which was almost 8 times larger than that of the conventional sputter method.

TL;DR: In this article, a new sputter technique for high rate deposition of TiO2 was developed for applying to common planar magnetron sputter system, using plasma sprayed TiO 2−x targets and a sputter gas of a few percent of O2 diluted with Ar.

TL;DR: A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO 2, was described in this article.