Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.

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Fundamentals of Power Semiconductor Devices

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

Use of multilevel inverters is becoming popular in recent years for high power applications. Various topologies and modulation strategies have been investigated for utility and drive applications in literature. Trends in power semiconductor technology indicate a trade-off in the selection of power devices in terms of switching frequency and voltage sustaining capability. New power converter topologies permit modular realization of multilevel inverters using a hybrid approach involving integrated gate commutated thyristors (IGCT) and insulated gate bipolar transistors (IGBT) operating in synergism. This paper is devoted to the investigation of a hybrid multilevel power conversion system typically suitable for high performance, high power applications. This system designed for 4.16 kV, /spl ges/100 hp load comprises of a hybrid seven-level inverter, a diode bridge rectifier and an IGBT rectifier per phase. The IGBT rectifier is used on the utility side as a real power flow regulator to the low voltage converter and as a harmonic compensator for the high voltage converter. The hybrid seven-level inverter on the load side consists of a high voltage, slow switching IGCT inverter and a low voltage, fast switching IGBT inverter. By employing different devices under different operating conditions, it is shown that one can optimize the power conversion capability of entire system. A detailed analysis of a novel hybrid modulation technique for the inverter, which incorporates stepped synthesis in conjunction with variable pulse width of the consecutive steps is included. In addition, performance of a multilevel current regulated delta modulator as applied to the single phase full bridge IGBT rectifier is discussed. Detailed computer simulations accompanied with experimental verification are presented in the paper.

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Hybrid multilevel power conversion system: a competitive solution for high power applications

A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base layer of the second conductivity type, and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell. A buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode. The dummy cell is provided with an inhibiting structure to reduce carriers of the second conductivity type to flow to and accumulate in the buffer layer from the collector layer.

Power semiconductor device

This paper reviews recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems. In the case of low voltage ( 100 V) power rectifiers, the silicon P-i-N rectifier continues to dominate but significant improvements are expected by the introduction of the silicon MPS rectifier followed by the GaAs and SiC based Schottky rectifiers. Equally important developments are occurring in power switch technology. The silicon bipolar power transistor has been displaced by silicon power MOSFETs in low voltage ( 100 V) systems. The process technology for these MOS-gated devices has shifted from V-MOS in the early 1970s to DMOS in the 1980s, with more recent introduction of the UMOS technology in the 1990s. For the very high power systems, the thyristor and GTO continue to dominate, but significant effort is underway to develop MOS-gated thyristors (MCTs, ESTs, DG-BRTs) to replace them before the turn of the century. Beyond that time frame, it is projected that silicon carbide based switches will begin to displace these silicon devices.

B. Jayant Baliga

Papers

Power semiconductor devices