B
B. Ouni
Researcher at Tunis El Manar University
Publications - 28
Citations - 859
B. Ouni is an academic researcher from Tunis El Manar University. The author has contributed to research in topics: Thin film & Band gap. The author has an hindex of 18, co-authored 26 publications receiving 703 citations. Previous affiliations of B. Ouni include Tunis University.
Papers
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Structural, opto-thermal and electrical properties of ZnO:Mo sprayed thin films
TL;DR: In this paper, the dispersion of the refractive index was discussed in terms of the single oscillator model proposed by Wemple and DiDomenico, and the activation energy was found to range from 0.63 to 0.94 eV; the electrical behavior can be correlated with Mo-doping.
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Study of nickel doping effects on structural, electrical and optical properties of sprayed ZnO semiconductor layers
TL;DR: In this paper, the effect of Ni concentration on the structural, electrical and optical properties of the zinc oxide doped nickel thin films was investigated, and the results showed that the films were well crystallized in wurtzite phase with the crystallites preferentially oriented towards (0, 0, 2) direction parallel c-axis.
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Physical investigations on MoO3 sprayed thin film for selective sensitivity applications
A. Boukhachem,C. Bouzidi,R. Boughalmi,R. Ouerteni,Massoud Kahlaoui,B. Ouni,Habib Elhouichet,Mosbah Amlouk +7 more
TL;DR: In this article, X-ray analysis showed that MoO 3 thin film crystallizes in orthorhombic structure with a preferred orientation of the crystallites along (020) and (040) directions.
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Dielectric relaxation, modulus behavior and conduction mechanism in Sb2S3 thin films
TL;DR: In this paper, the physical properties of Sb 2 S 3 thin films obtained through thermal treatment of thin Sb thin films under a sulfur atmosphere at temperature 300°C were reported.
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Investigation of electrical and dielectric properties of antimony oxide (Sb2O4) semiconductor thin films for TCO and optoelectronic applications
B. Ouni,M. Haj Lakhdar,R. Boughalmi,T. Larbi,A. Boukhachem,A. Madani,Karem Boubaker,Mosbah Amlouk +7 more
TL;DR: In this article, the electrical properties of Sb2O4 thin film were investigated using impedance spectroscopy technique in the frequency range 5-13MHz at various temperatures (325-450°C).