Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.

Recent advances in Schottky barrier concepts

We report true left-handed (LH) behavior in a composite metamaterial consisting of a periodically arranged split ring resonator (SRR) and wire structures. We demonstrate the magnetic resonance of the SRR structure by comparing the transmission spectra of SRRs with those of closed SRRs. We have confirmed experimentally that the effective plasma frequency of the LH material composed of SRRs and wires is lower than the plasma frequency of the wires. A well-defined LH transmission band with a peak value of 21.2 dB 20.3 dB cm was obtained. The experimental results agree extremely well with the theoretical calculations. © 2004 Optical Society of America OCIS codes: 120.7000, 260.2110.

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Experimental observation of true left-handed transmissionpeaks in metamaterials

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Silicon Vlsi Technology Fundamentals Practice And Modeling

The development of polymer micromachining technologies that complement traditional silicon approaches has enabled the broadening of microelectromechanical systems (MEMS) applications. Polymeric materials feature a diverse set of properties not present in traditional microfabrication materials. The investigation and development of these materials have opened the door to alternative and potentially more cost effective manufacturing options to produce highly flexible structures and substrates with tailorable bulk and surface properties. As a broad review of the progress of polymers within MEMS, major and recent developments in polymer micromachining are presented here, including deposition, removal, and release techniques for three widely used MEMS polymer materials, namely SU-8, polyimide, and Parylene C. The application of these techniques to create devices having flexible substrates and novel polymer structural elements for biomedical MEMS (bioMEMS) is also reviewed.

https://iopscience.iop.org/article/10.1088/0960-1317/26/1/013001/pdf

Review of polymer MEMS micromachining

A new formalism is reported for the analysis of the current–voltage (I–V) characteristics of a tunnel metal-insulator-semiconductor (MIS) device, which considers a bias dependent distribution of interface states and barrier lowering due to the image force. Our theoretical expression for the I–V characteristics is general in the sense that it is applicable even under conditions when both the thermionic emission and the diffusion mechanisms of current transport compete with each other. The method is ideal for new epitaxial materials and devices where the carrier density is not known precisely beforehand. A self-consistent method of analysis is reported to determine the characteristic parameters of MIS diodes, using simultaneously the I–V and capacitance–voltage data as a function of temperature. This computational analysis has been used to examine the current transport mechanism in an Au/p-InP epitaxial MIS diode. The experimental verification of the theory and computational analysis is done by comparing the values of the interface state density distribution in thermal equilibrium with the semiconductor Nss, obtained from the forward I–V characteristics, with those directly measured by the multifrequency admittance method. Excellent agreement from these comparisons strongly supports the validity of the theory. Over the temperature range of 200–393 K, our results indicate that the interfacial layer-thermionic emission was clearly the dominant mechanism of the forward current transport in an MIS fabricated on a lightly doped InP:Zn epitaxial layer. The transmission coefficient through the insulator layer obtained from the reverse I–V characteristics was θp=1.43×10−3±7% from which we estimate an oxide thickness of 2.2 nm. The analysis of the barrier height φb0 versus temperature, obtained from 1 MHz C–V data provided a value φ0=1.06 V±10% for the zero bias and zero temperature barrier height.

A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure

Oxidation of Silicon in the Presence of Chlorine and Chlorine Compounds

Compact antenna-coupled split-ring resonator-based sensors have been designed, fabricated, and tested for sensing glucose concentration in blood plasma Both circular and square type metallic ring is integrated along with two monopole antennas upon a dielectric substrate, which exhibits a resonance frequency of 19 GHz and 83 GHz, respectively The effect of defected ground plane is also investigated which is observed to produce a deep rejection frequency band with sharp cutoff resonant frequency The SRRs exhibit a shift in resonant frequency with change in reflection coefficient when subjected to blood plasma with different concentration of glucose

A defected ground split ring resonator for an ultra-fast, selective sensing of glucose content in blood plasma

Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications

In this paper we report the modeling and experimental measurements for optical control of a microstrip load and λg/4 stub fabricated on high-resistivity silicon substrate. We present the basic circuit model of a photoinduced or optical load created by a laser spot at the end of an open microstrip line. The modeled optical load has been used to simulate reflections at open microstrip line terminated by the optical load. The results obtained by both simulation and measurement show that an optical load created at the open termination of a microstrip line can control the reflection parameter of the line. A similar optical load created at the end of an open λg/4 stub on a microstrip line has been shown to control the transmitted power at the design frequency. The measurement results compare well with those predicted by both a simple circuit simulation and a simulation carried out on the Ansoft Maxwell simulator using a termination obtained by an equivalent circuit model of the optical load. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 271–276, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11188

Optically controlled microstrip load and stub on silicon substrate

A detailed theoretical analysis on light transmission through a corrugated long-period waveguide grating made in a silica-on-silicon planar waveguide is presented. A grating period of ~280 mum is considered in order to achieve a strong rejection band at a wavelength region of 1.5 mum. Phase-matching graphs are studied to find the relationship between the resonance wavelength and the grating period. The effects of the variation of the waveguide and grating parameters on the resonance wavelength are investigated in detail. Polarization dependence on the waveguide gratings is studied, and finally, the design is optimized by proper choice of the grating parameters, which results in a polarization-independent rejection band in the operating wavelength region. This type of waveguide grating has significant potential for various integrated-optic devices and sensing applications.

Babu Ram Singh

Papers

Oxidation of Silicon in the Presence of Chlorine and Chlorine Compounds

A defected ground split ring resonator for an ultra-fast, selective sensing of glucose content in blood plasma

Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications

Optically controlled microstrip load and stub on silicon substrate

Analysis and Design of Corrugated Long-Period Gratings in Silica-on-Silicon Planar Waveguides