An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A semiconductor device includes capacitors connected in parallel. Electrode active portions and a discharge active portion are defined on a semiconductor substrate, and capping electrodes are disposed respectively on the electrode active portions. A capacitor-dielectric layer is disposed between each of the capping electrodes and each of the electrode active portions that overlap each other. A counter doped region is disposed in the discharge active portion. A lower interlayer dielectric covers the entire surface of the semiconductor substrate. Electrode contact plugs respectively contact the capping electrodes through the lower interlayer dielectric, and a discharge contact plug contacts the counter doped region through the lower interlayer dielectric. A lower interconnection is disposed on the lower interlayer dielectric and contacts the electrode contact plugs and the discharge contact plug.

Semiconductor devices and methods of fabricating the same

A method of fabricating a semiconductor device includes preparing a semiconductor wafer having a top surface and a bottom surface. The semiconductor wafer is loaded onto a wafer chuck, and the bottom surface of the loaded semiconductor wafer faces the wafer chuck. A groove is formed in the top surface of the loaded semiconductor wafer by irradiating a second laser onto the top surface, and a reforming region is formed in the loaded semiconductor wafer under the groove by irradiating a first laser through wafer chuck and bottom surface of the semiconductor wafer into a region in which the first laser is focused. The semiconductor wafer is unloaded from the wafer chuck. The bottom surface of the semiconductor wafer is ground to decrease a thickness of the semiconductor wafer. The semiconductor wafer is separated along the groove and the reforming region, thereby forming a plurality of unit chips.

Method of Fabricating Semiconductor Device

A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film, and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

Semiconductor devices having 3d channels, and methods of fabricating semiconductor devices having 3d channels

A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.

Method for fabricating capacitor

A method for forming a semiconductor device is provided to easily perform a pattern formation process without being limited by the shape and size of a semiconductor substrate by using a photoresist layer including a thermal acid generator and by using a thermal conductive material pattern as a mask. A thermal conductive material pattern(120) is formed on a semiconductor substrate(100). Photoresist composition including a thermal acid generator is deposited on the resultant semiconductor substrate to form a photoresist layer. Heat is applied to the thermal conductive material pattern to transform the thermal conductive material pattern and an adjacent photoresist layer into a heat sensitizing part(140). The heat sensitizing part is removed by a developer solution, and the thermal conductive material pattern is removed to form a photoresist layer pattern. The surface of the semiconductor substrate can be a three-dimensional cubic structure.

Method for forming semiconductor device

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of restraining the damage of a pattern due to surface tension by covering the surface of the pattern with supersaturated CO2 bubbles when carrying out a rinsing process for removing a remaining developer. CONSTITUTION: After coating resist on the entire surface of an etch object layer(21), the resist is then selectively exposed. After forming a resist pattern(22) by developing the exposed resist, a rinsing process is carried out at the resultant structure by using the first rinse solution for removing the developer used when carrying out the developing process. Then, the second rinse solution containing supersaturated CO2 gas, is jetted onto the resultant structure. The surface tension between resist patterns is controlled by forming resist adsorption bubbles(23) made of the CO2 gas on the surface of the resist pattern. Then, the remaining second rinse solution is removed.

Method for fabricating of semiconductor device

PURPOSE: An alignment mark for an exposure process is provided to precisely detect position information of the alignment mark and to increase overlay precision between upper and lower layers, by making the alignment mark have a lattice of a fine width. CONSTITUTION: At least two lattice patterns of a dot type has a fine line width and is formed in a scribe line portion of a wafer to precisely align the wafer in an exposure process using a reduced exposure apparatus. The lattice pattern has a fine line width of a regular square the side portion of which is from 0.15 micrometer to 0.8 micrometer.

Alignment mark for exposure process

A pellicle device and a pattern forming method using the same are provided to reduce fabrication costs and time by preventing the generation of difference of CD(Critical Dimension) between patterns of a chip field and restraining the penetration of particles using an improved membrane with nonuniform transmissivity. A pellicle device includes a quartz substrate(100) with a light shielding pattern, a membrane, and an aluminium frame. The membrane(160) has nonuniform transmissivity. The aluminium frame(140) is formed on the quartz substrate. The aluminium frame is used for fixing the membrane. The transmissivity of the membrane is in a predetermined range of 80 to 100%.

Pellicle equipment and method for forming pattern using the same

PURPOSE: A method for repairing defects of a phase shift mask is provided to enhancing a transmittance of the phase shift mask by using an FIB(focus ion beam) and a laser repair tool CONSTITUTION: The defect repair method comprises the steps of laminating a resist layer(30) formed on a quartz plate(10); forming a phase shifting pattern(20) by etching the resist layer(30) so that defect portions(40) are generated in the phase shifting pattern(20); firstly removing the defect portions(40) using an FIB apparatus(50) having good repair accuracy; and secondly removing the remained defect portions(40) by radiating a laser beam to the shrinkage defect portion(45) using a laser repair tool In order to entirely remove the defect portion, cleaning process using mixed solutions of H2SO4 and H2O4 is further comprised

Bae Sang Man

Papers

Method for forming semiconductor device

Method for fabricating of semiconductor device

Alignment mark for exposure process

Pellicle equipment and method for forming pattern using the same

Defect repair method of phase shift mask