The invention discloses an SPS connection method for tungsten and molybdenum dissimilar refractory metals. The SPS connection method is characterized in that blocky tungsten is taken as a base body, the base body and molybdenum powder are sintered and connected through an SPS technology, so that a connecting piece of the tungsten and molybdenum dissimilar refractory metal is obtained. According tothe SPS connection method, the molybdenum powder can be sintered and compacted on the tungsten base body, meanwhile, sintering connection of the tungsten and molybdenum metals is realized, so that the connecting piece with high strength and good forming effect is obtained, and the room temperature shearing strength of a joint can reach 152.9 MPa.

SPS connection method for tungsten and molybdenum dissimilar refractory metals

The invention relates to a middle-high temperature thermoelectric module. The middle-high temperature thermoelectric module comprises at least one group of thermoelectric pair, wherein the thermoelectric pair comprises two thermoelectric blocks connected through an insulating supporting plate; an electrode formed on a high temperature end surface of the thermoelectric pair; a diffusion blocking protection layer formed at least on the surface of the thermoelectric pair and/or the surfaces of the two thermoelectric blocks; an anti-oxidation layer formed at least on the surface of the thermoelectric pair and/or the surfaces of the two thermoelectric blocks; and an aerogel thermal insulation layer filling a gap of the at least one group of thermoelectric pair. The thermoelectric module provided by the invention simultaneously has the performance of sublimation prevention, anti-oxidation, heat insulation and the like, and the thermoelectric performance and the efficiency of the thermoelectric module are improved; in addition, the thermoelectric module has a self-protection function when working under conditions relating to corrosive gas, moist, chemical medium corrosion, temperature cold-hot alternation and the like.

Middle-high temperature thermoelectric module

The invention relates to a thermoelectric material, in particular to a preparation method of an electric field driven in-situ gradient thermoelectric material. The preparation method comprises the following steps of: obtaining Zn-Sb base or Bi-Te base thermoelectric material powder or blocks through market purchasing or a method such as a vacuum melting method or a mechanical alloying method; then taking a high-temperature molybdenum alloy mold or performing insulation treatment on a graphite mold; performing directional resistance sintering to obtain the gradient thermoelectric material. According to the preparation method, during preparation of the gradient material, the adverse impact brought by a connecting interface between different gradient materials in a segmented gradient thermoelectric material is avoided, an obvious atomic concentration gradient is formed, the preparation process of the gradient thermoelectric material is greatly simplified, the thermoelectric performance of the gradient thermoelectric material is improved, and the practicability of a thermo battery is promoted.

Preparation method of electric field driven in-situ gradient thermoelectric material

The invention provides a method for preparing titanium-cobalt-antimono thermal-electrical semiconductor, comprising following steps: grinding titanium powder, cobalt powder, antimony powder or titanium powder, titanium powder, cobalt powder, antimony powder cobalt powder and antimony powder for 2-4 hours by employing absolute ethyl alcohol as medium; putting grinded powder in vacuum drier hopper for drying; putting dried powder into graphite mold for compaction, sintering in discharge plasma sintering device, and cooling. The invention finishes synthesis and sintering of said semi-conductor in one step by applying SPS technology, and crystal grain size is fine. It is characterized by simple process, high availability ratio and shortened production cycle.

Titanium cobalt antimony base thermoelectric semiconductor material preparation method

The invention relates to skutterudite-based thermoelectric element equipment and a preparation method thereof, and provides skutterudite-based thermoelectric element equipment. The skutterudite-based thermoelectric element equipment comprises a thermoelectric element and at least one electrode, wherein the thermoelectric element is provided with a surface and is made of thermoelectric element material, the electrode is coupled to the surface of the thermoelectric element and is used for carrying current to the thermoelectric element or from the thermoelectric element, each electrode comprises an electrode layer, each electrode layer is made of at least two metals, is used for covering at least one part of the surface of the thermoelectric element, and is directly or indirectly connected with at least one part of the surface of the thermoelectric element, each electrode layer comprises at least one of (i) alloy of at least two metals; (ii) a multi-layer structure, and each layer comprises at least one of two metals. The invention also provides the preparation method of the skutterudite-based thermoelectric element equipment.

Skutterudite-based thermoelectric element equipment and preparation method thereof

The material of the electrode applies the molybdenum with the thickness of 0.5-1.5 mm. The electrode of cobalt antimonide base thermoelectric material achieves the combination, by introducing the titanium through the two-step procedure, the discharging and the sinter. The sinter of the cobalt antimonide thermoelectric material and the combination between the powder and the electrode material are processed simultaneously. The high intensity of combination, excellent stability and convenient combination technology are supplied.

Bai Shengqiang

Papers

Electrode material of cobalt base antimonide pyroelectric material and preparing process thereof