B
Bart van Schravendijk
Researcher at Lam Research
Publications - 91
Citations - 4763
Bart van Schravendijk is an academic researcher from Lam Research. The author has contributed to research in topics: Layer (electronics) & Dielectric. The author has an hindex of 35, co-authored 91 publications receiving 4757 citations.
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Patent
Plasma activated conformal dielectric film deposition
Shankar Swaminathan,Jon Henri,Dennis M. Hausmann,Pramod Subramonium,Mandyam Sriram,Vishwanathan Rangarajan,Kirthi K. Kattige,Bart van Schravendijk,Andrew John McKerrow +8 more
TL;DR: In this article, the dopant species is delivered to the film between the cycles of adsorption and reaction in a surface-mediated reaction, where a film is grown over one or more cycles of reaction.
Patent
Very high aspect ratio gapfill using HDP
Patrick A. Van Cleemput,George D. Papasouliotis,Mark A. Logan,Bart van Schravendijk,William J. King +4 more
TL;DR: In this paper, a process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtered inert gas such as He.
Patent
Plasma activated conformal film deposition
Adrien Lavoie,Shankar Swaminathan,Hu Kang,Ramesh Chandrasekharan,Tom Dorsh,Dennis M. Hausmann,Jon Henri,Jewell Thomas G,Ming Li,Bryan Schlief,Antonio Xavier,Thomas W. Mountsier,Bart van Schravendijk,Easwar Srinivasan,Mandyam Sriram +14 more
TL;DR: In this article, surface mediated reactions are used to grow a film on a substrate surface, where a film is grown over one or more cycles of reactant adsorption and reaction.
Patent
Conformal doping via plasma activated atomic layer deposition and conformal film deposition
TL;DR: In this paper, the authors present methods of doping a patterned substrate in a reaction chamber, which may include forming a conformal film layer which has a source including a dopant, and driving some of the dopant into the substrate to form conformal doping profile.
Patent
Method for depositing a chlorine-free conformal SiN film
TL;DR: In this paper, the authors described methods of making silicon nitride (SiN) materials on substrates and improved SiN films made by the methods are also included. But, they did not specify how to improve the performance of the resulting SiN materials.