An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Light-emitting device

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film

Field-effect transistor

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 , and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6 , a drain electrode 5 , a gate electrode 4 , a gate insulating film 3 , and a channel layer 2 , an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 is used in the channel layer 2.

Amorphous oxide and thin film transistor

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Amorphous oxide and field effect transistor

PROBLEM TO BE SOLVED: To obtain an oxide film having excellent transmitting property for blue light while reducing the amt. of In2O3 which is a scarse mineral resource by using an oxide having a specified compsn. of Zn, Al and Ba, In as a target and specifying the substrate temp. and pressure. SOLUTION: An oxide expressed by the general formula of ZnxMyInzO(x+3y/2+3z/2) is used as a target to form an oxide film by sputtering or laser ablation method under the conditions of from room temp. to 300 deg.C substrate temp. and 1×10-2 to 10 (Pa) pressure. In the formula, M is at least one element of Al and Ga, the proportion x/y ranges 0.2 to 12, the proportion z/y ranges 0.4 to 1.4. The conductivity of the oxide of the target is good when the carrier electron density in the conductive band ranges about 1×1018 to 1×1022/cm3. By injecting actions to the oxide, carrier electrons are injected to the conductive band to develop the conductivity.

Article having transparent conductive oxide thin film and its production

PROBLEM TO BE SOLVED: To manufacture the article having excellent electric conductivity and superior transparency throughout the entire visible ray region by providing the article with a transparent conductive oxide thin film which is formed on a substrate with a laser ablation method using a zinc-indium based oxide as a material of a target. SOLUTION: In the manufacture of this article, a transparent conductive oxide thin film is formed on at least one surface of a substrate in at least a part of the surface by a laser ablation method using a zinc-indium based oxide target which consists of a material represented by the formula ZnxMyInzO(x+3y/2+3z/2) (M is at least any one element of Al and Ga; the ratio x:y is 0.2:1 to 8:1; and the ratio z:y is 0.4:1 to 1.4:1), wherein: the formation of the thin film is performed in an oxygen atmosphere having an about 1×10-6 to 100 Pa oxygen partial pressure; also as the laser, a laser beam of any wavelength in the range of the ultraviolet region to the infrared region can be used and the laser beam intensity used at the time of performing laser beam irradiation is about 0.0001 to 1,000 J/cm2.pulse; and as a material of the substrate, any organic or inorganic material can be used and the substrate temp. used is about 0 to 1,000 deg.C.

Article having transparent electrically conductive oxide thin film and its manufacture

PROBLEM TO BE SOLVED: To realize a transparent semiconductor bond utilizing characteristics of an oxide, by laminating an inorganic material layer containing composite oxide containing at least Cu, and an n-type semiconductor oxide layer showing an n-type conductive characteristic, on a substrate. SOLUTION: This laminated thin film has a structure in which an inorganic material layer 4 containing composite oxide containing monovalent Cu such as CuAlO2 or SrCu2O2, i.e., an inorganic oxide material and an n-type semiconductor layer 2 showing an n-type conductive characteristic are laminated on a substrate 1. Preferably, the inorganic layer 4 has a band gap of 2.5 eV or more, and is a p-type semiconductor. Preferably, the n-type semiconductor layer 2 is made of n-type semiconductor oxide and a compound containing ZnO as a main component, and has a band gap of 2.5 eV or more. Preferably, a transparent material such as glass is used for the substrate 1. As a result, a transparent substrate bond utilizing characteristics of oxide can be realized, and an electronic device such as a diode or the like can be obtained.

Semiconductor laminated thin film, electronic device and diode

PROBLEM TO BE SOLVED: To provide a surface treatment method of a quartz glass substrate capable of obtaining a quartz glass substrate having a high flatness (subnanometer level) which can meet the demand for a lithography reflection mask substrate using an extreme ultraviolet ray (EUV) in the field of LSI or the like, and a hydrogen radical etching apparatus suitably used for the treatment method. SOLUTION: The method is for controlling the surface flatness of a quartz glass substrate, where the quartz glass substrate is set in a hydrogen radical etching apparatus and hydrogen radicals work on the quartz glass substrate to control the surface flatness by a subnanometer level. COPYRIGHT: (C)2008,JPO&INPIT

Surface treatment method of quartz glass substrate and hydrogen radical etching apparatus

PROBLEM TO BE SOLVED: To provide a method for manufacturing a precision press formed article having high transmittance, and to provide a method of treatment of coloring and decoloring an optical glass. SOLUTION: This method for manufacturing a glass formed article comprises heat treating a press formed article containing at least a kind selected from WO3, Nb2O5 and TiO2 under oxidative atmosphere. This method for decoloring a colored glass containing at least either of WO3 and Nb2O5 comprises heat treating under oxidative atmosphere. Further this method for decoloring a glass containing at least a kind selected from WO3, Nb2O5 and TiO2 comprises heat treating under non-oxidative atmosphere.

博司川副

Papers

Article having transparent conductive oxide thin film and its production

Article having transparent electrically conductive oxide thin film and its manufacture

Semiconductor laminated thin film, electronic device and diode

Surface treatment method of quartz glass substrate and hydrogen radical etching apparatus

Method for manufacturing glass formed article, optical element obtained by the method, and method for treating glass

博司 川副

Papers

Article having transparent conductive oxide thin film and its production

Article having transparent electrically conductive oxide thin film and its manufacture

Semiconductor laminated thin film, electronic device and diode

Surface treatment method of quartz glass substrate and hydrogen radical etching apparatus

Method for manufacturing glass formed article, optical element obtained by the method, and method for treating glass

博司川副