Showing papers by "Boris I Shklovskii published in 1979"

Coulomb gap in disordered systems: Computer simulation

Abstract: The density of states (DS) of a disordered system with localised electronic states is studied in the vicinity of the Fermi level with the Monte-Carlo computer simulation for the two- and three-dimensional simple model. The minimisation of the total energy with respect to all one-electron transitions is shown to be a good approximation both for the total energy and for the DS. The electron-electron interaction drastically changes the DS in the vicinity of the Fermi level. The DS is shown to have a 'soft' Coulomb gap, and the self-consistent equation fits the results of simulation well. The finite size effect is also studied.

Impurity band structure in lightly doped semiconductors

Abstract: The density of states and the position of the Fermi level in the impurity band at zero temperature have been studied by Monte Carlo computer simulation over a wide range of degrees of compensation The impurity concentration is thought to be so small that the electron states of the impurity band are localised The density of states has a soft Coulomb gap in the vicinity of the Fermi level, and its behaviour in this region is shown to have a universal character In the cases of extremely small and extremely close compensation the simulation results agree with the theoretical ones obtained earlier The increase in the activation energy epsilon 1 of the band conductivity at high degrees of compensation is computed and agrees with the experimental results However, the computed value of hopping conductivity activation energy epsilon 3 is four times as large as the experimental one