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Byung-hak Lim
Researcher at Samsung
Publications - 4
Citations - 155
Byung-hak Lim is an academic researcher from Samsung. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 3, co-authored 4 publications receiving 155 citations.
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Patent
Method for manufacturing a vertical transistor having a storage node vertical transistor
TL;DR: In this article, a three-dimensional structured vertical transistor or memory cell including the steps of forming a silicon-on-insulator (SOI) structure on a semiconductor substrate, sequentially depositing a drain region, a channel region, and a source region on the SOI substrate structure, a cylinder-type gate insulation layer surrounding the channel region and a gate electrode surrounding the gate insulation layers, to increase the integration of a device.
Patent
Vertical transistor and memory cell
TL;DR: In this paper, a three-dimensional structured vertical transistor or memory cell is constructed on a semiconductor substrate and sequentially deposits a drain region, a channel region and a source region on the SOI substrate structure.
Patent
Capacitor of a semiconductor device having increased effective area
TL;DR: In this paper, a method for manufacturing a semiconductor memory device with a single transistor and a single capacitance is presented, where the storage capacity is increased by increasing the effective area of the capacitor, and the planarizing effect is also excellent.
Patent
Semiconductor memory device and a manufacturing method therefor
TL;DR: In this article, a method for manufacturing a semiconductor memory device with a single transistor and a single capacitance is presented, where the storage capacity is increased by increasing the effective area of the capacitor, and the planarizing effect is also excellent.